|
|
G63.00001: Defect Spectroscopy of Ga2O3
Invited Speaker:
Steven Ringel
|
|
|
G63.00002: Ab initio studies on segregation of n-type dopants and vacancies near beta-Ga2O3(010) surface
Jingyang Wang, Paulette Clancy
|
|
|
G63.00003: Electronic properties of the Ga2O3-Fe2O3 system
Shoaib Khalid, Fernando Sabino, Anderson Janotti
|
|
|
G63.00004: Unusual Formation of Point Defects and Their Complexes in Ultra-wide Band Gap Beta-Ga2O3
Jared Johnson, Zhen Chen, Joel Varley, Christine Jackson, Esmat Farzana, Aaron Arehart, Hsien-Lien Huang, Steven Ringel, Chris Van de Walle, David Muller, Jinwoo Hwang
|
|
|
G63.00005: Donor and acceptor properties in Ga2O3 polymorphs
John Lyons, Darshana Wickramaratne, Joel Varley
|
|
|
G63.00006: Optical Properties of Acceptor Impurities in Ga2O3
Intuon Chatratin, Fernando Sabino, Pakpoom Reunchan, Anderson Janotti
|
|
|
G63.00007: Transition levels for impurities in β-Ga2O3
Suman Bhandari, Mary Zvanut
|
|
|
G63.00008: Bismuth-alloyed Ga2O3 as a novel p-type transparent conducting oxide
Xuefen Cai, Fernando P. Sabino, Anderson Janotti, Suhuai Wei
|
|
|
G63.00009: Direct Imaging on Strain Relaxation of MBE-grown Single Phase alpha-(Al,Ga)2O3 on m-sapphire Substrate in Atomic Resolution Using Scanning Transmission Electron Microscopy
Celesta Chang, Riena Jinno, Debdeep Jena, Huili Grace Xing, David Anthony Muller
|
|
|
G63.00010: Ultrafast Optical Measurement of Defect Dynamics in β-Ga2O3 using Supercontinuum Pump-Probe Spectroscopy.
Arjan Singh, Okan Koksal, Nicholas Tanen, Debdeep Jena, Huili Xing, Farhan Rana
|
|
|
G63.00011: X-ray diffraction studies of GaN p-i-n structures for high power electronics
Alexandra Zimmerman, Jiaheng He, GuanJie Cheng, Davide Del Gaudio, Jordan Occena, Fabian Naab, Mohsen Nami, Bingjun Li, Jung Han, Rachel Goldman
|
|
|
G63.00012: Influence of interfacial defects on the electronic states at GaN p-i-n diode interfaces
GuanJie Cheng, Jiaheng He, Alexandra Zimmerman, Davide Del Gaudio, Fabian Naab, Mohsen Nami, Bingjun Li, Jung Han, Rachel Goldman
|
|
|
G63.00013: Study of carbon-related point defects in C-doped GaN using photo-induced electron paramagnetic resonance spectroscopy
Subash Paudel, Mary Zvanut, Michal Bockowski
|
