Heterostructures: An Evidence of Magnetism?*

In this talk, we present our recent observation of a robust, hysteretic magnetoresistance (MR) in low-doped Sr_1-xLa_xSnO₃ films grown on GdScO₃ (001)_pc using radical-based MBE approach. At low temperatures, sample showed a transport behavior consistent with Efros-Shklovskii variable range hopping. The MR shows negative values for 6 K ≤ T ≤ 200 K whereas it crosses over to positive values at lower temperatures, 1.8 K ≤ T ≤ 5 K. A large anisotropy was observed at 1.8 K between the out-of-plane and the in-plane MR values with MR exceeding 100% for magnetic field in the plane of the sample. Significantly, a robust hysteretic behavior was observed at low temperatures, which disappears only at temperature above 5 K. We discuss the physical origin of the hysteresis, and the origin of large in-plane MR in low-doped SrSnO₃ providing important and critical insights into the role of defects, strain and the choice of substrates on the electronic and magnetic properties.