Nanomembranes

Doped BaSnO₃ is a wide band-gap semiconductor that is known to exhibit high electron mobility at room temperature, showing great prospects as an alternative transparent conducting oxide to the industry standard indium-tin-oxide. Flexible transparent conducting oxides are of special interest for future photonics and optoelectronic devices but realizing high-quality films as flexible materials has been a challenge. In this work, we will discuss our efforts to fabricate nanometer thick, freestanding La-doped BaSnO₃ film that are highly conducting and transparent using a water-soluble and lattice matched Ba₃Al₂O₆ buffer layer¹. Using this technique, we can transfer the nanomembranes onto a flexible device platform and characterize the physical and electronic properties of La-doped BaSnO₃ as a function of strain.

¹P. Singh, A. G. Swartz, D. Lu, S. S. Hong, K. Lee, K. Nishio, Y. Hikita, and H. Y. Hwang, ACS Appl. Electron. Mater. 1, 1269-1274 (2019).