Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session A64: High Mobility, Wide Bandgap Oxides for Electronics
8:00 AM–11:00 AM,
Monday, March 2, 2020
Room: Mile High Ballroom 4E
Sponsoring
Unit:
DMP
Chair: Turan Birol, University of Minnesota
Abstract: A64.00006 : Weak Electron-Electron Interaction effects in La-doped SrSnO3 Films
Presenter:
Tianqi Wang
(Department of Chemical Engineering and Materials Science, University of Minnesota)
Authors:
Tianqi Wang
(Department of Chemical Engineering and Materials Science, University of Minnesota)
Jin Yue
(Department of Chemical Engineering and Materials Science, University of Minnesota)
Laxman R. Thoutam
(Department of Chemical Engineering and Materials Science, University of Minnesota)
Abhinav Prakash
(Department of Chemical Engineering and Materials Science, University of Minnesota)
Bharat Jalan
(Department of Chemical Engineering and Materials Science, University of Minnesota)
In this talk, we present the temperature and magnetic field dependent transport study of La-doped SrSnO3 (SSO) films. We demonstrate that the electron-electron interaction effect is primarily responsible for an increase in the Hall coefficient in the La-doped SSO films below 50 K accompanied by an increase in the sheet resistance. Magnetoresistance fitting yielded a large electron phase coherence length exceeding 450 nm at 1.8 K and revealed the electron-electron interaction to be the electron phase-coherence breaking mechanism in La-doped SSO films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications in quantum coherent electronic devices owing to their large phase coherence length.
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