Thursday, November 17, 2011
9:30AM - 10:00AM
|
|
NR1.00001: Mechanism of Si and metal etching based on sticking reaction model
Invited Speaker:
Preview Abstract |
Thursday, November 17, 2011
10:00AM - 10:15AM
|
|
NR1.00002: Noninvasive sheath diagnostics in an inductively coupled plasma using a remote RF sensor
Satoru Kobayashi, Shahid Rauf, ken Collins
Preview Abstract |
Thursday, November 17, 2011
10:15AM - 10:30AM
|
|
NR1.00003: Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma
Ankur Agarwal, Shahid Rauf, Jim He, Jinhan Choi, Ken Collins
Preview Abstract |
Thursday, November 17, 2011
10:30AM - 10:45AM
|
|
NR1.00004: Deposition Step in MEMS Time Multiplexed Etch
Lawrence Overzet, Iqbal Saraf, Matthew Goeckner
Preview Abstract |
Thursday, November 17, 2011
10:45AM - 11:00AM
|
|
NR1.00005: Study on modification process of photoresist by fluorocarbon ions and radicals
Takuya Takeuchi, Shinpei Amasaki, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori
Preview Abstract |
Thursday, November 17, 2011
11:00AM - 11:15AM
|
|
NR1.00006: Mechanism of Highly Selective SiO$_{2}$ Etching over Si using New Alternative Gas, C$_{5}$HF$_{7}$
Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Atsuyo Yamazaki, Azumi Ito, Hirokazu Matsumoto
Preview Abstract |
Thursday, November 17, 2011
11:15AM - 11:30AM
|
|
NR1.00007: Exploring High AR 2$\mu $m TSV (25:1)
Maarten Kostermans, Ulrich Baier, Werner Boullart, Mohand Brouri, Johan Vertommen, Arnaud Pageau
Preview Abstract |
Thursday, November 17, 2011
11:30AM - 11:45AM
|
|
NR1.00008: 2D etch rate uniformity improvement in a parallel turn ICP system: numerical modeling and experiment
Junghoon Joo
Preview Abstract |
Thursday, November 17, 2011
11:45AM - 12:00PM
|
|
NR1.00009: Simulation study of SF6 plasma etching in the GEC reference cell
Sergio Lopez-Lopez, Brent Walker, James Munro, Jonathan Tennyson
Preview Abstract |
Thursday, November 17, 2011
12:00PM - 12:15PM
|
|
NR1.00010: Fourier Transform Infrared Absorption Spectroscopy of Gas-Phase and Surface Reaction Products during Si Etching in Inductively Coupled Cl$_{2}$ Plasmas
Hiroki Miyata, Hirotaka Tsuda, Daisuke Fukushima, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Preview Abstract |
Thursday, November 17, 2011
12:15PM - 12:30PM
|
|
NR1.00011: Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependences of Si etching with Cl, Br, and HBr beams
Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Preview Abstract |
