Wednesday, October 6, 2010
4:00PM - 4:15PM
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LW4.00001: High growth rate of GaN homoepitaxy by molecular beam epitaxy using high density nitrogen radical source
Yohjiro Kawai, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Shang Chen, Hiroki Kondo, Mineo Hiramatsu, Masaru Hori
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Wednesday, October 6, 2010
4:15PM - 4:30PM
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LW4.00002: New Phases of Boron Nitride Grown by Laser-Plasma Synchronous Chemical Vapor Deposition
Shojiro Komatsu, Kazuaki Kobayashi, Takahiro Nagata, Toyohiro Chikyo
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Wednesday, October 6, 2010
4:30PM - 4:45PM
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LW4.00003: Silicon carbon nitrid thin films prepared by PECVD technology
Jozef Huran, Pavol Boh\'a\v{c}k, Valery N. Shvetsov, Alexander P. Kobzev, Albin Valovi\v{c}
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Wednesday, October 6, 2010
4:45PM - 5:00PM
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LW4.00004: Infrared spectroscopic study on substrate bias effects on amorphous carbon deposition process during acetylene plasma
Masanori Shinohara, Taka-aki Kawakami, Kojiro Hara, Yoshinobu Matsuda, Hiroshi Fujiyama, Yuki Nitta, Tatsuyuki Nakatani
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Wednesday, October 6, 2010
5:00PM - 5:15PM
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LW4.00005: Synthesis of bio-compatible coatings stimulated by electron-beam plasma
Tatiana Vasilieva, Sergey Lysenko, Vadim Kukareko
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Wednesday, October 6, 2010
5:15PM - 5:30PM
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LW4.00006: Investigation of nanoparticle growth in ECR based plasma using Langmuir probe
Pavel Yuryev, Alexander Drenik, Maria Calafat, Freddy Gaboriau, Richard Clergereaux
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Wednesday, October 6, 2010
5:30PM - 5:45PM
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LW4.00007: RF-Plasma Controlled High-Yield Synthesis and Properties of Nitrogen Endohedral Fullerene
Soon Cheon Cho, Toshiro Kaneko, Rikizo Hatakeyama
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Wednesday, October 6, 2010
5:45PM - 6:00PM
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LW4.00008: Effects of deposition time on the structural and properties of nano-scale grain size beta-tantalum thin films produced by a magnetron sputtering system
Davoud Dorranian, Elmira Solati, Mohammadreza Hantehzadeh, Mahmood Ghoranneviss, Amirhossein Sari
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