Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session LW4: Plasma Deposition II
4:00 PM–6:00 PM,
Wednesday, October 6, 2010
Room: Grand Amphitheatre
Chair: Nader Sadeghi, Universite Joseph Fourier, Grenoble
Abstract ID: BAPS.2010.GEC.LW4.1
Abstract: LW4.00001 : High growth rate of GaN homoepitaxy by molecular beam epitaxy using high density nitrogen radical source*
4:00 PM–4:15 PM
Preview Abstract Abstract
Authors:
Yohjiro Kawai
(Nagoya University)
Yoshio Honda
(Nagoya University)
Masahito Yamaguchi
(Nagoya University)
Hiroshi Amano
(Nagoya University)
Shang Chen
(Nagoya University)
Hiroki Kondo
(Nagoya University)
Mineo Hiramatsu
(Meijo University)
Masaru Hori
(Nagoya University)
*This work was supported by the Ministry of Education, Culture, Sports, Science and Technology, Knowledge Cluster Initiative Tokai Region Nanotechnology Manufacturing Cluster.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.GEC.LW4.1
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