Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session LW4: Plasma Deposition II
4:00 PM–6:00 PM,
Wednesday, October 6, 2010
Room: Grand Amphitheatre
Chair: Nader Sadeghi, Universite Joseph Fourier, Grenoble
Abstract ID: BAPS.2010.GEC.LW4.3
Abstract: LW4.00003 : Silicon carbon nitrid thin films prepared by PECVD technology*
4:30 PM–4:45 PM
Preview Abstract Abstract
Authors:
Jozef Huran
(Inst. of Electrical Engineering, Slovak Academy of Sciences, Slovakia)
Pavol Boh\'a\v{c}k
(Inst. of Electrical Engineering, Slovak Academy of Sciences, Slovakia)
Valery N. Shvetsov
(Inst. of Electrical Engineering, Slovak Academy of Sciences, Slovakia)
Alexander P. Kobzev
(Joint Institute for Nuclear Research, 141980 Dubna, Russian Federation)
Albin Valovi\v{c}
(Inst. of Electrical Engineering, Slovak Academy of Sciences, Slovakia)
*This research has been supported by the Slovak Research and Development Agency under the contracts APVV-0713-07 and by the Scientific Grant Agency of the Ministry of Education of the Slovakia and Slovak Academy of Sciences, No. 2/0192/10.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.GEC.LW4.3
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