Bulletin of the American Physical Society
APS March Meeting 2022
Volume 67, Number 3
Monday–Friday, March 14–18, 2022; Chicago
Session Q71: Improving Coherence for Quantum DevicesFocus Recordings Available
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Sponsoring Units: DMP Chair: Yu Zhang, Los Alamos National Lab Room: Hyatt Regency Hotel -Jackson Park C |
Wednesday, March 16, 2022 3:00PM - 3:36PM |
Q71.00001: TBD; tentatively: "spin and optical coherence of defect centers and quantum control" Invited Speaker: Tim Schröder
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Wednesday, March 16, 2022 3:36PM - 4:12PM |
Q71.00002: Five-second coherence of a single spin with single-shot readout in silicon carbide Invited Speaker: Elena O Glen The neutral divacancy (VV0) in silicon carbide (SiC) is a spin defect that boasts a near-infrared spin-photon interface [1], long coherence times [2], and is hosted in a material that provides opportunities for wafer-scale semiconductor device engineering. Despite these advantages, single-shot readout (SSR)--deterministic measurement of the quantum state--has long been an outstanding hurdle for defect spins in SiC. Here, we present a demonstration of SSR of a single VV0 using spin-to-charge conversion (SCC) [3]. This SCC technique maps the spin state onto a long-lived charge state that can be optically read out. Using this technique, we achieve over 80% readout fidelity of the spin state without pre- or post-selection and harness the high signal-to-noise ratio of the readout to measure ultralong spin coherence times. We apply pulsed dynamical decoupling sequences to an isotopically purified host material and use SCC to measure single-spin T2 times exceeding five seconds, over two orders of magnitude greater than previously reported for this system. The SSR demonstrated here unlocks key capabilities for SiC-based systems, such as entanglement distribution and enhanced ac-sensitivity in quantum sensing schemes. These results also pave the way for integration of defects into single-charge sensitive, classical electrical devices. |
Wednesday, March 16, 2022 4:12PM - 4:24PM |
Q71.00003: Microcavity-enhanced rare-earth ion emission Ruggero Emmanuele, Eric Masson, David Gosztola, Saw Wai Hla, Neil Robertson, Xuedan Ma Unique to rare-earth ions, their partially filled 4f shells are shielded from the surrounding environment, thus rendering extraordinary optical and spin coherence properties of the rare-earth ions. Despite their remarkable optical properties including sharp optical transitions and weak dependence on the external environment, the application of the rare-earth ions in lighting and quantum technologies has often been hindered by their weak oscillator strength and faint emission. Rare-earth ion molecular complexes offer the opportunity to overcome this limitation by sensitizing the rare-earth ions with antenna ligands. In this work, we modify the photoluminescence (PL) properties of rare-earth ion molecular complexes by coupling them to an open Fabry-Pérot cavity. The precisely adjustable cavity length of the open cavity allows in situ tuning of its resonance wavelength. By scanning the cavity mode through the rare-earth ion emission and in situ monitoring the corresponding PL emission in the momentum space, a significant PL enhancement and lifetime shortening can be achieved when in the resonance configuration. This work indicates the natural compatibility of the rare-earth ion molecules with microcavity structures and paves the way towards their integration with photonic devices. |
Wednesday, March 16, 2022 4:24PM - 4:36PM |
Q71.00004: Structural and Optical Properties of Erbium-doped Anatase TiO2 Thin Films on LaAlO3 (001) Kidae Shin, Isaiah Gray, Frederick J Walker, Jeff D Thompson, Charles H Ahn Rare-earth ion (REI) defects in solid-state hosts are an attractive platform for quantum information processing due to long coherence times and potential scalability. Recent efforts to increase coherence times in REI defects have focused on finding suitable host crystals with minimal sources of decoherence (e.g., nuclear spin, oxygen vacancies, and strain variation). To this end, molecular beam epitaxy (MBE) offers advantages, as it can grow epitaxial films using highly pure elemental sources and isotopically purified materials. In addition, MBE growth can provide these materials in thin film and heterostructure forms that offer flexible and scalable host crystal environments. |
Wednesday, March 16, 2022 4:36PM - 4:48PM |
Q71.00005: Towards a scalable solid-state platform for spin qubits with a telecom optical interface Michael T Solomon, Alan M Dibos, Manish Kumar Singh, Sean E Sullivan, Gary Wolfowicz, F. Joseph Heremans, Supratik Guha, David D Awschalom Scalable solid-state materials platforms with integrated spin qubits and silicon CMOS compatibility are highly desirable for quantum communication and computing applications. Platforms with qubits operating at telecom wavelengths are well suited for such optical quantum networks. Isolated atomic defects in crystals with a spin-photon interface are ideal quantum emitters and spin qubits; however, the brightest of these defect qubits often have transitions outside telecom wavelengths, limiting their direct use for long distance protocols. Meanwhile, defects with telecom optical transitions such as erbium have long radiative lifetimes and thus low photon emission rates. Current approaches addressing this challenge through Purcell enhancement present challenges in heterogeneous defect-device integration and processing complexities. Here we present a scalable approach towards high-quality CMOS-compatible telecom qubits enabled by rare-earth doped oxide films coupled to silicon photonic crystal cavities. The fabricated devices exhibit high quality factors and Purcell-enhanced optical lifetimes limited by the emitter homogeneous linewidths. This materials platform represents a significant step forward towards realizing quantum memories in a scalable qubit architecture compatible with mature silicon technologies. |
Wednesday, March 16, 2022 4:48PM - 5:00PM |
Q71.00006: Origin of mechanical and dielectric losses from two-level systems in amorphous silicon Frances Hellman, Manel Molina Ruiz, Yaniv J Rosen, Hilary C Jacks, Matthew R Abernathy, Thomas H Metcalf, Xiao Liu, Jonathan L DuBois Tunneling two-level systems (TLSs), which are the main contributors to energy loss of amorphous solids at low temperatures, are found to vary widely in amorphous silicon (a-Si), depending strongly and reproducably on controllable growth parameters. TLSs affect both mechanical and electromagnetic resonators and produce thermal and electromagnetic noise and energy loss. It is unclear whether the TLSs that dominate mechanical and dielectric losses are the same; while the former relies on the coupling between TLSs and elastic fields, determined by coupling constant gamma, the latter relies on the coupling between TLSs and electromagnetic fields, determined by dipole moment ??0. We prepared a-Si films by ultra-high vacuum electron-beam deposition with a range of growth parameters and characterized them structurally (including atomic density, short and medium range order, and dangling bond density) and by low temperature mechanical and dielectric loss measurements using double paddle high Q oscillators and superconducting microwave resonators respectively. Films show a large reduction of mechanical loss (>30 times) and a far smaller reduction of dielectric loss (~2 times) with increased growth temperature. Additionally, mechanical loss shows lower loss for thicker films, while dielectric loss shows lower loss for thinner films. Analysis of these results indicates that mechanical loss correlates with atomic density, while dielectric loss correlates with dangling-bond density, which suggests a different structural origin for these two energy dissipation processes in a-Si. Alternatively, since mechanical and dielectrics loss results are obtained for two quite different frequency ranges (kHz and GHz), these data could support the idea that the standard tunneling model for TLS requires modification. |
Wednesday, March 16, 2022 5:00PM - 5:12PM |
Q71.00007: Superconducting Materials in High Magnetic Fields for High Energy Physics Quantum Sensing Applications Sam Posen, Mattia Checchin, Anna Grassellino, Roni Harnik, Oleksandr Melnychuk For quantum sensing applications in high energy physics, such as searching for dark matter axion particles, there is a need for resonators that maintain a high quality factor (Q0) in multi-tesla magnetic fields. Superconducting radiofrequency (SRF) cavities are promising candidates, but their potential for high Q0 in large magnetic fields is not well explored yet. In this contribution, we describe efforts from the SQMS Center at Fermilab to explore the potential of Nb3Sn SRF cavities in this regime. These efforts leverage previous investments in Nb3Sn cavities for particle acceleration applications. Results from measurements of Nb3Sn cavities in 6 T magnetic fields at liquid helium temperatures are presented. The outlook for future experiments in the mK regime is also discussed. |
Wednesday, March 16, 2022 5:12PM - 5:24PM |
Q71.00008: Near-infrared Quantum Emitters in 2D Semiconductor Heterobilayers Huan Zhao, Xiangzhi Li, Vigneshwaran Chandrasekaran, Michael T Pettes, Han Htoon Solid-state single-photon emitters (SPEs), or quantum emitters, are central building blocks for a number of emerging photonic quantum technologies. As SPE research in 2D materials to date has primarily focused on the visible spectral range, it is highly desirable to extend the emission range of 2D SPEs to the technologically important near-infrared (NIR) regime. |
Wednesday, March 16, 2022 5:24PM - 5:36PM |
Q71.00009: Towards a CMOS-compatible telecom nanolaser platform on silicon Sean E Sullivan, Michael T Solomon, Manish Kumar Singh, Alan M Dibos, Joseph F Heremans, Supratik Guha, David D Awschalom Compact chip-scale laser sources that can be directly integrated with silicon CMOS processes are a promising scalable alternative to heterogeneous integration of off-chip lasers, especially in forthcoming integrated photonics applications for photonic quantum information processing where thousands of sources on-chip would be beneficial. Here, we present our recent work toward developing chip-scale nanolasers that operate in the telecom C-band. We utilize rare earth-doped oxide films grown on silicon-on-insulator (SOI) as a gain medium. We fabricate silicon waveguides and 1D photonic crystal cavities to form arrays of devices and perform subsequent atomic layer deposition (ALD) that is compatible with CMOS processes. We have demonstrated amplified spontaneous emission using these cavities via linewidth narrowing and second-order photon correlation measurements. Finally, we will present our recent efforts to engineer fully coherent emission from these devices. |
Wednesday, March 16, 2022 5:36PM - 5:48PM |
Q71.00010: Study of Size, Shape, and Etch pit formation in InAs/InP Droplet Epitaxy Quantum Dots Raja Sekhar Reddy Gajjela, Niels R.S. van Venrooij, Adonai Rodrigues da Cruz, Joanna Skiba-Szymanska, Mark R Stevenson, Andrey B Krysa, Jon Heffernan, Andrew J Shields, Michael E Flatté, Craig E Pryor, Paul M Koenraad InAs/InP self-assembled quantum dots (QDs) emitting in the telecom range (~1550 nm) with a small FSS have been developed recently as a result of reduced lattice mismatch and improved growth techniques. We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski-Krastanov (SK) InAs/InP QDs by cross-sectional scanning tunneling microscopy (X-STM) and present an atomic-scale comparison of structural characteristics of QDs grown by both growth techniques proving that the DE yields uniform and shape symmetric QDs. Both DE and SKQDs are found to be truncated pyramid-shaped with a large and sharp top facet. The presence of the etch pits underneath the DEQDs is explained by the phenomenon of local droplet etching. Finite element simulations are performed to fit the experimental outward relaxation and local lattice constant profiles of the cleaved DEQDs. The composition of the DEQDs is estimated to be pure InAs obtained by combining both FE simulations and X-STM results with a minor intermixing close to the QD edges. The formation of a discontinuous DE wetting layer from As to P surface exchange is compared with the standard SKQDs wetting layer. We found that the DEQDs have preferential {136} or {122} side facets. The structural characterization performed in this work provides detailed feedback to the growers to further optimize the growth of DEQDs. |
Wednesday, March 16, 2022 5:48PM - 6:00PM |
Q71.00011: Large scale systematic characterization of CNTs for spin-qubit integration Maria El Abbassi, Frederik Van Veen, Romaric Le Goff, Arthur Larrouy, Sergio De Bonis, Matthieu Delbecq, Takis Kontos, Joseph Sulpizio, Louis Virey, Davide Stefani, Matthieu Desjardins C12 quantum electronics is a deep tech start-up aiming at building a reliable and scalable quantum processor. The technology is based on manipulating the spin of an electron hosted in ultra-clean carbon nanotubes (CNTs), the closest realization of a single spin in vacuum- where we expect ultra-low decoherence rates. The information is processed by coupling the spin to superconducting microwave circuits. We aim to develop a scalable quantum platform with all-to-all connectivity thanks to the engineering of coherent coupling between the semiconducting qubits and the electromagnetic modes of a high quality resonator. |
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