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L57.00001: Complementary logic inverters based on polarity-controllable MoS2 fin-shaped and v-shaped field effect transistors
Che-Yu Lin, Po-Chun Chen, Ming-Cheng Chen, Ming-Yang Li, Lain-Jong Li, Kai-Shin Li, YannWen Lan
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L57.00002: Device simulation study of ion-gated ambipolar transition-metal dichalcogenide transistors
Akiko Ueda, Yijin Zhang, Hiroshi Imamura, Yoshihiro Iwasa
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L57.00003: Hybrid Transfer of 2D materials: An approach towards a wrinkle and contaminations free transfer of 2D materials grown on metallic substrates for van der Waals heterostructures and large scale industrial applications.
Sajith Withanage, Tharanga Nanayakkara, U. Kushan Wijewardena, Annika Kriisa, Ramesh Mani
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L57.00004: Magnetotransport studies in hybrid 2D/0D nanostructures
Ethel Perez-Hoyos, Yunqiu (Kelly) Luo, Abhilasha Dehankar, Jinsong Xu, Daniel Pharis, Roland Kawakami, Jessica Winter, Ezekiel Johnston-Halperin
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L57.00005: Electron Transport of Germanium Sulfide Field- Effect Transistor Using Layered Black Phosphorus
Abrar Alhazmi, Malak Albogami, Olaiyan Alolaiyan, Mohammed R Amer
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L57.00006: Contact Doped Multi-layer Tungsten Diselenide Field Effect Transistors
Inyong Moon, Sungwon Lee, Minsup Choi, Won Jong Yoo
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L57.00007: 2D NC-FET, FE-FET and FeS-FET
Invited Speaker:
Peide (Peter) Ye
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L57.00008: Controlling optoelectronic properties of 2D semiconductors: band engineering and
moiré superlattices.
Invited Speaker:
Roman Gorbachev
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L57.00009: New Approaches and Observations in Scaled Contacts for 2D FETs
Zhihui Cheng, Hattan Abuzaid, Yifei Yu, Shreya Singh, Linyou Cao, Curt Richter, Aaron Franklin
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L57.00010: Ultrasensitive molecular interaction in MoS2-graphene hybrid structure via electrostatic control
Rahul Tripathi, Abha Misra
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L57.00011: Monolayer-Bulk Black Phosphorus Natural Heterojunction Tunnel Field-Effect Transistor for Low Power Switches
Seungho Kim, Sungjae Cho, Gyuho Myeong, Wongil Shin, Hongsik Lim, Boram Kim, Taehyeok Jin, Sungjin Chang, Kenji Watanabe, Takashi Taniguchi
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