Atomic precision advanced manufacturing for electronic devices*

Since the advent of atomic manipulation with the scanning tunneling microscope (STM), a significant challenge for atomic scale fabrication has been to build structures large enough to exhibit emergent system-level phenomena that can be understood at a macroscopic level. Using fabrication to build a bridge between atomistic details and macroscopic properties promises to deepen our understanding of physical phenomena that are otherwise understood only in a coarse-grained way. STM-based hydrogen lithography on silicon can be used to place individual donor atoms comprising a device, a process we refer to as atomic precision advanced manufacturing (APAM). Although this capability promises to bolster our semiclassical understanding of electron transport in electronic devices, application of this technique has been held back by two factors that are the focus of this talk. In this talk, I will detail our efforts to make more atomically perfect devices, attempting to control both the precision placement of dopants and also their surroundings, and more complex devices, incorporating metal-oxide-semiconductor (MOS) gates. In the future, advanced devices could open the door to understanding the limitations of some fundamental assumptions in device physics including semiclassical approximations and linear response.