Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session J63: Optical Probes and Imaging of Defects
2:30 PM–5:18 PM,
Tuesday, March 3, 2020
Room: Mile High Ballroom 4D
Sponsoring
Units:
DMP DCMP FIAP
Chair: Leora Dresselhaus-Cooper, Lawrence Livermore Natl Lab
Abstract: J63.00008 : Infrared Transmission of Ge:Mn Thick Films Prepared by Ion Implantation and Post-Annealing*
Presenter:
David Crandles
(Brock University)
Authors:
Laila Hassan Obied
(Brock University)
Sjoerd Roorda
(Physics, University of Montreal)
Shenqiang Zhou
(Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum, Dresden-Rossendorf)
Slawomir Prucnal
(Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum, Dresden-Rossendorf)
David Crandles
(Brock University)
Aproximately 3 micrometer thick Ge:Mn films were prepared by low temperature ion-implantation followed by post-annealing. XRD, SIMS, magnetometry and infrared transmission (100-6500 cm-1) were used to characterize the films. The average Mn concentration in the amorphous implanted films is less than 0.3%. Annealing causes approximately 40-70% of Mn atoms to migrate to Mn-rich clusters or form Mn5Ge3 while the remainder enters the Ge lattice and creates free holes. If annealed at high enough temperature the amorphous films become polycrystalline. Solid phase epitaxy does not occur. A Drude peak and structure in the mid-infrared absorption observed by infrared transmission provide evidence for free holes. The data suggest that the maximum solubility of Mn in Ge is less than 0.08 %.
*Work supported by NSERC and the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713)
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