Bulletin of the American Physical Society
APS March Meeting 2020
Volume 65, Number 1
Monday–Friday, March 2–6, 2020; Denver, Colorado
Session J63: Optical Probes and Imaging of Defects
2:30 PM–5:18 PM,
Tuesday, March 3, 2020
Room: Mile High Ballroom 4D
Sponsoring
Units:
DMP DCMP FIAP
Chair: Leora Dresselhaus-Cooper, Lawrence Livermore Natl Lab
Abstract: J63.00007 : Charge sensing in CMOS devices using reflectometry
Presenter:
Joffrey Rivard
(Institut quantique, Universite de Sherbrooke, Canada)
Authors:
Joffrey Rivard
(Institut quantique, Universite de Sherbrooke, Canada)
Clément Godfrin
(Institut quantique, Universite de Sherbrooke, Canada)
Alexei Orlov
(Departement of Electrical Engineering, University of Notre-Dame, USA)
Eva Dupont-Ferrier
(Institut quantique, Universite de Sherbrooke, Canada)
Spin qubits in silicon are great candidates for scalable quantum information processors due to their long coherence time and compatibility with industrial CMOS fabrication lines.[1] Usual spin-readout techniques imply spin-to-charge conversion and charge readout by transport measurement. This requires multiple leads and limits the scalability of the system. A solution is to do charge sensing using RF-reflectometry measurement[2] for which only one lead is necessary to control and read the qubit.[3] The critical part is to obtain an impedance matching, at low temperature, between the resonant circuit and the RF-line. Finding this matching condition can be challenging considering the temperature dependence of each of the tank circuit component and the sample-to-sample capacitance variability. A solution is to use a varactor[4] to adjust in situ the circuit impedance. In this talk, we report on optimization of reflectometry setups at low temperature and discuss the use of tunable capacitors for in situ tuning targeting high sensitivity RF-measurement for spin qubit readout.
[1] J. Yoneda, et al., Nat. Nano. 13, 102-106(2018)
[2] B. J. Villis, et al., Appl. Phys. Lett. 104, 233503(2014)
[3] P. Pakkiam, et al., Phys. Rev., 8, 041032(2018)
[4] N. Ares, et al., Phys. Rev., 5, 034011(2016)
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