Part I, Fabrication*

Gate-defined quantum dots in monolayer and bilayer WSe₂ are a platform for novel quantum transport and quantum optoelectronic investigations of WSe₂, as well as for potential applications in coherent valleytronics. In this presentation, we discuss design considerations and implementations for the fabrication of ~100 nm diameter gate-defined, p-type quantum dots in monolayer and bilayer WSe₂. The devices were controlled using a combination of bottom confining gates and a top accumulation gate, with hBN used for gate insulation and encapsulation of the WSe₂. Top hBN and WSe₂ were transferred onto Pt for reliable p-type bottom contact.