Part II, Measurement*

Gate-defined quantum dots in monolayer and bilayer WSe₂ are a platform for novel quantum transport and quantum optoelectronic investigations of WSe₂, as well as for potential applications in coherent valleytronics. In this presentation, we discuss low-temperature electronic transport measurements of p-type gate-defined quantum dots in monolayer and bilayer WSe₂. These devices are operated with gates above and below the WSe₂ layer so that carriers are accumulated in the WSe₂, then selectively depleted to define the dot. We report observations of Coulomb blockade as well as excited state spectroscopy of confined holes in WSe₂ dots.