Electronic and Structural Properties of Defects in Few Layer Molybdenum Disulfide Films*

Molybdenum disulfide (MoS₂) has emerged as an attractive candidate for next-generation 2D electronic devices yet the exact role of defects on its electronic properties is still not well understood. In this study we employ scanning tunneling microscopy and spectroscopy, transmission electron microscopy and kelvin probe force microscopy to obtain quantitative measurements of the local density of states, work function and nature and mobility of these defects. The defects investigated include individual point defects such as sulfur and molybdenum vacancies and extended defects like grain boundaries and film edges.