Magnetic doping of 2D semiconductor crystals*

Recently reported ferromagnetism in two dimensional crystals have gain increasing interest due to its potential for developing a new generation of 2D spintronic devices. Doping transition metal dichalcogenides with magnetic atoms such as Cr, Mn and Fe, is another approach worth exploring. High doping levels can lead to 2D diluted magnetic semiconductors with crystalline structure compatible with the TMDs that can be connected laterally to create in-plane lateral heterostructures with potential for spin valves or spin-FETs applications. In this work, we report on the Mn magnetic doping of Transition metal dichalcogenides (e.g MoSe₂) using a chemical vapor deposition approach. The optical properties of the as grown films were studied by micro-Raman and PL spectroscopy. Morphology and thickness of the samples were characterized via SEM and AFM, respectively. The samples display room-temperature magnetism and a clear temperature dependent ferromagnetic characteristic.