Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session R33: Semiconductors and Applications I
8:00 AM–11:00 AM,
Thursday, March 7, 2019
BCEC
Room: 204B
Sponsoring
Unit:
FIAP
Chair: Mike Capano
Abstract: R33.00003 : Strain-induced Gunn Effect in Silicon Nanowires
8:24 AM–8:36 AM
Presenter:
Reza Nekovei
(Department of Electrical Engineering & Computer Sciences, Texas A&M University-Kingsville, Kingsville, TX, USA)
Authors:
Daryoush Shiri
(Department of Microtechnology & Nanosciences, Chalmers University of Technology, Gothenburg, Sweden)
Amit Verma
(Department of Electrical Engineering & Computer Sciences, Texas A&M University-Kingsville, Kingsville, TX, USA)
Reza Nekovei
(Department of Electrical Engineering & Computer Sciences, Texas A&M University-Kingsville, Kingsville, TX, USA)
Andreas Isacsson
(Department of Physics, Chalmers University of Technology, Gothenburg, Sweden)
Selva Selvakumar
(Department of Electrical & Computer Engineering, University of Waterloo, Waterloo, ON, Canada)
Anant Anantram
(Department of Electrical Engineering, University of Washington, Seattle, WA, USA)
In stark contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. However using Density Functional Theory (DFT), Tight Binding and Ensemble Monte Carlo (EMC) methods we show for the first time that: (1) Gunn Effect can be induced in silicon nanowires (SiNW) under 3% tensile strain and an electric field of 5000 V/cm,
(2) the onset of NDR in I-V characteristic is reversibly adjustable by strain, and (3) strain modulates the resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e.those without NDR. Results of this study promise applications of SiNW-based Gunn diodes in microwave oscillators. The observed NDC is different in principle from Esaki-Diode and Resonant Tunneling Diodes (RTD) in which NDR originates from tunneling effect not electron transfer between subbands of different effective mass.
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700