Monday, March 4, 2019
11:15AM - 11:51AM
|
|
B11.00001: First-principles calculations on dislocation-point defect interactions in Cu(In,Ga)Se2 solar cell absorbers
Invited Speaker:
Karsten Albe
|
Monday, March 4, 2019
11:51AM - 12:03PM
|
|
B11.00002: Observation of Enormous Non-Linearities in the Output Electroluminescence Characteristics of Room-Temperature GaN-Based Microcavities
Aniruddha Bhattacharya
|
Monday, March 4, 2019
12:03PM - 12:15PM
|
|
B11.00003: The Near-Surface Electrostatic Environment of n-Doped Silicon Probed with a Moveable Dangling Bond Point Probe
Taleana Huff, Thomas Dienel, Mohammad Rashidi, Roshan Achal, wyatt vine, Robert A Wolkow
|
Monday, March 4, 2019
12:15PM - 12:27PM
|
|
B11.00004: Extinction of Random Telegraph Switching by “Cryogenic Annealing” in Small Area Si MOS Transistors
Gangyi Hu, Mark Lee, Hisashi Shichijo, Clint A Naquin, Hal Edwards
|
Monday, March 4, 2019
12:27PM - 12:39PM
|
|
B11.00005: Hyperdoping silicon for intermediate band photoconductivity
Yining Liu, Shao Qi Lim, Wenjie Yang, Phillippe K Chow, Imad Agha, James S Williams, Jeffrey M Warrender, Jay Mathews
|
Monday, March 4, 2019
12:39PM - 12:51PM
|
|
B11.00006: The evolution of atomic structure and chemical states of ultra-low energy high-dose Boron implanted Si via UV laser annealing
Kuang Yao Lo, Fu-Ying Lee, Zong-Zhe Wu, Li-Chi Kao, Feng-Ming Chang, Yu-Ming Chang
|
Monday, March 4, 2019
12:51PM - 1:03PM
|
|
B11.00007: Defect studies in Ge and GeSn thin films grown on Si
Christina Scott, Imad Agha, Jay Mathews
|
Monday, March 4, 2019
1:03PM - 1:15PM
|
|
B11.00008: Crystal growth, electronic structure and optical properties of BaZrS3 and its Ruddlesden-Popper phases
Shanyuan Niu, Kristopher Williams, Wei Li, Debarghya Sarkar, Fei Hou, Boyang Zhao, Kevin Ye, Elisabeth Bianco, Michael E McConney, Ralf Haiges, David Singh, Jan Seidel, Rafael Jaramillo, Rehan Kapadia, William A Tisdale, Anderson Janotti, Jayakanth Ravichandran
|
Monday, March 4, 2019
1:15PM - 1:27PM
|
|
B11.00009: ABSTRACT WITHDRAWN
|
Monday, March 4, 2019
1:27PM - 1:39PM
|
|
B11.00010: Point defects and dopants of boron arsenide from first-principles calculations: donor compensation and doping asymmetry
Sieun Chae, Kelsey Mengle, John Heron, Emmanouil Kioupakis
|
Monday, March 4, 2019
1:39PM - 1:51PM
|
|
B11.00011: Effect of substitutional defects on the thermal conductivity of boron arsenide
Nakib Protik, Mauro Fava, Natalio Mingo, Jesús Carrete, Georg Madsen, Navaneetha Krishnan Ravichandran, David A Broido
|
Monday, March 4, 2019
1:51PM - 2:03PM
|
|
B11.00012: Beyond diffusion limit defect imaging and independent determination of the spatial profiles of electron and hole density near a dislocation defect by combining Raman and photoluminescence (PL) imaging
Chang-Kui Hu, Qiong Chen, Fengxiang chen, Timothy Hurley Gfroerer, Mark W Wanlass, Yong Zhang
|
