Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session R37: Devices from 2D Materials IV - Optoelectronics
8:00 AM–11:00 AM,
Thursday, March 8, 2018
LACC
Room: 411
Sponsoring
Unit:
DMP
Chair: Zhipei Sun, Aalto University
Abstract ID: BAPS.2018.MAR.R37.8
Abstract: R37.00008 : Large Photo-Thermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam
9:48 AM–10:00 AM
Presenter:
Josue Lopez
(EECS, MIT)
Authors:
Josue Lopez
(EECS, MIT)
Antonio Ambrosio
(Harvard Center for Nanoscale Systems)
Siyuan Dai
(Physics, University of California San Diego)
Chuong Huynh
(Carl Zeiss Microscopy, LLC)
David Bell
(Harvard Center for Nanoscale Systems)
Xiao Lin
(Nanyang Technological University)
Nicholas Rivera
(Physics, MIT)
Shengxi Huang
(EECS, MIT)
Qiong Ma
(Physics, MIT)
Soeren Eyhusen
(Carl Zeiss Microscopy, LLC)
Ido Kaminer
(Physics, MIT)
Kenji Watanabe
(National Institute for Materials Science)
Takashi Taniguchi
(National Institute for Materials Science)
Jing Kong
(EECS, MIT)
Dimitri Basov
(Physics, Columbia University )
Pablo Jarillo-Herrero
(Physics, MIT)
Marin Soljacic
(Physics, MIT)
The controlled nanoscale patterning of 2D materials is a promising approach for engineering their optical, thermal, and mechanical properties. Herein, we demonstrate nanoscale patterning of hexagonal boron nitride (h-BN) via both helium and neon ion beams and the resulting photo-thermal effects. We fabricate a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and nanostructures with different aspect ratios. Raman spectroscopy is used to study the defects induced by the ion beam and is correlated to scanning probe microscopy. Photo-thermal and scanning near-field optical microscopy measure the near-field absorption and scattering. These measurements reveal a large photo-thermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN. For the nanostructures with the largest photo-thermal expansion (absorption), the Raman signal for the h-BN phonon mode at 1368 cm-1 is reduced 49 times while the photo-thermal expansion is increased 11 times, indicating that the nanostructuring significantly modifies the h-BN. Photo-thermal expansion should be present in other vdW materials and may lead to nanomechanical switches driven by light.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.R37.8
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