Thermal plasmon Frequency for tunable extrinsic Dirac structures

Analytic expressions have been obtained for the chemical potential of a variety of extrinsic (doped) gapped Dirac materials. We also created a reliable piecewise-linear model for the density-of-states in molybdenum disulfide, which demonstrates good agreement with previously obtained numerical results. A decrease of chemical potential with increasing temperature due to enhanced thermal populations of an upper subband in silicene was also shown. In MoS$_2$, the chemical potential is found to cross a zero-energy point at sufficiently high temperatures because of the broken symmetry with respect to electron and hole states.