Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session H36: 2D Materials - van der Waals Heterostructures II
2:30 PM–5:30 PM,
Tuesday, March 6, 2018
LACC
Room: 410
Sponsoring
Unit:
DCMP
Chair: Scott Schmucker, NIST
Abstract ID: BAPS.2018.MAR.H36.5
Abstract: H36.00005 : Bottom-up graphene nanoribbon(GNR) device based on van der Waals heterostructure
3:18 PM–3:30 PM
Presenter:
Kyunghoon Lee
(Physics, UC Berkeley)
Authors:
Kyunghoon Lee
(Physics, UC Berkeley)
Shuang Wu
(EECS, UC Berkeley)
Gabriela Borin Barin
(Surfaces laboratory, EMPA)
Juan Llinas
(EECS, UC Berkeley)
Young-Jae Shin
(Physics, Harvard)
Philip Kim
(Physics, Harvard)
Roman Fasel
(Surfaces laboratory, EMPA)
Felix Fisher
(Chemistry, UC Berkeley)
Michael Crommie
(Physics, UC Berkeley)
Jeffrey Bokor
(EECS, UC Berkeley)
Alex Zettl
(Physics, UC Berkeley)
Although substantial efforts have been devoted, the field of bottom-up GNR device exploration is still in its infancy such that the device taking advantages of GNR’s extraordinary properties hasn’t yet been successfully demonstrated. Thus, developing novel nanoscale architectures that make the most out of GNRs’ potential is essential and prerequisite for further investigation. Here, we show a new bottom-up GNR nanostructure-based platform via dry transfer method to harness exciting physical phenomena. Using our device concept, we integrate top-down and bottom-up techniques to demonstrate high quality GNR devices. Bottom-up GNRs are small enough to bring their quantum mechanical nature to GNR devices that could exhibit quantum effect, even at ambient temperature, which has been elusive in conventional electronics. Our work will be an important step towards opening the new possibility of realizing 1-nm scale electronics in the post-silicon era.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.H36.5
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