Spatial Control of Charge Doping in van der Waals Heterostructures

Advancements in designing innovative electronic devices and exploring novel physics are often limited by the spatial control of charge doping in 2D materials. A variety of conventional techniques, such as electrostatic gating, are used to achieve charge doping control but suffer from complicated fabrication processes that introduce impurities and lack flexibility. To overcome these challenges, we have introduced new methods of patterning doping profiles in van der Waals heterostructures by controllably exciting defect states in our device with light illumination and local field excitation. In this study we create rewritable nanoscale doping patterns with improved spatial control. These spatially dependent doping patterns are then characterized through local probe and transport methods. This local patterning technique will enable novel device designs and allow for the exploration of patterned superlattice structures in 2D materials.