Monday, March 21, 2011
2:30PM - 2:42PM
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D22.00001: The band structure of VO2 measured by angle-resolved photoemission
Luca Moreschini, Young Jun Chang, Davide Innocenti, Andrew L. Walter, Young Su Kim, Geoffrey Gaines, Aaron Bostwick, Jonathan Denlinger, Eli Rotenberg
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Monday, March 21, 2011
2:42PM - 2:54PM
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D22.00002: Electronic structure of strained vanadium dioxide thin films using soft X-ray spectroscopy
Jude Laverock, Louis Piper, Andrew Preston, Bo Chen, James McNulty, Kevin Smith, Salinporn Kittiwatanakul, Jiwei Lu, Stuart Wolf
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Monday, March 21, 2011
2:54PM - 3:06PM
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D22.00003: Scanning Photocurrent Microscopy of VO$_{2}$ Nanobeams
Christopher Miller, Mark Triplett, Joel Lammatao, Kevin Wang, Derrick Fu, Junqiao Wu, Dong Yu
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Monday, March 21, 2011
3:06PM - 3:18PM
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D22.00004: Conductivity anisotropy in strained VO$_{2}$ thin films, probed by THz Time Domain Spectroscopy
Mengkun Liu, Elsa Abreu, Jiwei Lu, Kevin West, Salinport Kittiwatanakul, Wenjing Yin, Stuart Wolf, Richard Averitt
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Monday, March 21, 2011
3:18PM - 3:30PM
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D22.00005: X-ray induced photoconductivity in Vanadium Dioxide samples
Sebastian Dietze, Jyoti Mohanty, Moses Marsh, Jong Woo Kim, Kevin West, Ivan K. Schuller, Oleg G. Shpyrko
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Monday, March 21, 2011
3:30PM - 3:42PM
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D22.00006: Electric field-induced breakdown of the Mott insulating state in V2O3 nanostructures
Justin Brockman, Li Gao, Nagaphani Aetukuri, Brian Hughes, Charles Rettner, Mahesh Samant, Kevin Roche, Stuart Parkin
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Monday, March 21, 2011
3:42PM - 3:54PM
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D22.00007: Gatability of vanadium dioxide single crystal nanobeams and hydrogen doping
Jiang Wei, Heng Ji, Douglas Natelson
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Monday, March 21, 2011
3:54PM - 4:06PM
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D22.00008: Dependence of VO$_{2}$ thin-film metal-insulator transition on its intrinsic impurities
Changhong Chen, Yong Zhao, Zhaoyang Fan
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Monday, March 21, 2011
4:06PM - 4:18PM
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D22.00009: Manipulation of avalanche characteristics in nanoscaled VO$_{2}$ devices
Siming Wang, Kevin G. West, Ivan K. Schuller
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Monday, March 21, 2011
4:18PM - 4:30PM
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D22.00010: stoichiometry engineering of metal-insulator transition in suspended single crystalline vanadium dioxide nanobeams
Shixiong Zhang, In Soo Kim, Lincoln J. Lauhon
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Monday, March 21, 2011
4:30PM - 4:42PM
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D22.00011: Tungsten as a substitutional dopant and its effect on ultrafast switching of vanadium dioxide
Joyeeta Nag, Kannatassen Appavoo, Weidong Luo, Gerd Duscher, Sokrates Pantelides, Richard Haglund
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Monday, March 21, 2011
4:42PM - 4:54PM
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D22.00012: Control of the metal-insulator transition in vanadium dioxide nanobeams
Jae Hyung Park, Serkan Kasirga, Jiang Wei, Nicholas Noll, Vincent Roma, David H. Cobden
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Monday, March 21, 2011
4:54PM - 5:06PM
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D22.00013: Electrical properties of vanadium dioxide devices for micro-electronic applications making use of metal-insulator phase transitions
Koen Martens, Iuliana P. Radu, Sofie Mertens, Christoph Adelmann, Xiaoping Shi, Hilde Tielens, Marc Schaekers, Cedric Huyghebaert, Sven Van Elshocht, Stefan De Gendt, Marc Heyns, Jorge A Kittl
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Monday, March 21, 2011
5:06PM - 5:18PM
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D22.00014: Metal-insulator transition mechanism in VO2 under electric bias
Yong Zhao, Ji Hao, Changhong Chen, Zhaoyang Fan
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Monday, March 21, 2011
5:18PM - 5:30PM
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D22.00015: Electric-field-driven phase transition in vanadium dioxide
B. Wu, A. Zimmers, H. Aubin, R. Gosh, Y. Liu, R. Lopez
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