Electrical properties of vanadium dioxide devices for micro-electronic applications making use of metal-insulator phase transitions*

In principle the metal-to-insulator transition offers prospects for use in an electronic switch. This study investigates the properties of VO$_{2}$ test devices to evaluate VO$_{2}$'s potential use in micro-electronic applications such as a memory, two-terminal selector or transistor device. Vanadium dioxide thin films were produced by thermal oxidation of vanadium and the physical properties of these layers were investigated. Electrical properties of concentric two-terminal vanadium dioxide structures will be discussed such as current-voltage behavior, switching behavior and contact formation to VO$_{2}$ with different metals and implications such as Fermi-level pinning and Schottky-type behavior for different metals.