Bulletin of the American Physical Society
APS March Meeting 2010
Volume 55, Number 2
Monday–Friday, March 15–19, 2010; Portland, Oregon
Session H22: Epitaxial Graphene on Silicon Carbide
8:00 AM–11:00 AM,
Tuesday, March 16, 2010
Room: Portland Ballroom 252
Sponsoring
Unit:
DCMP
Chair: Gregory Rutter, National Institute of Standards and Technology
Abstract ID: BAPS.2010.MAR.H22.11
Abstract: H22.00011 : Selective Graphitization of Silicon Carbide: Effect of Argon Background Pressure and Transport Measurements on the Epitaxial Graphene
10:00 AM–10:12 AM
Preview Abstract Abstract
Authors:
Farhana Zaman
(Georgia Institute of Technology)
Miguel Rubio-Roy
(Georgia Institute of Technology)
Yike Hu
(Georgia Institute of Technology)
Claire Berger
(Georgia Institute of Technology)
Michael Moseley
(Georgia Institute of Technology)
James Meindl
(Georgia Institute of Technology)
Walt de Heer
(Georgia Institute of Technology)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.H22.11
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