Tuesday, March 16, 2010
8:00AM - 8:12AM
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H22.00001: Controlled growth of monolayer graphene on silicon carbide
David Torrance, David Miller, Madeleine Phillips, Holly Tinkey, Evan Green, Phillip First
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Tuesday, March 16, 2010
8:12AM - 8:24AM
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H22.00002: The role of carbon surface diffusion on the growth of epitaxial graphene on SiC
Taisuke Ohta, Norman Bartelt, Shu Nie, Konrad Thuermer, Gary Kellogg
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Tuesday, March 16, 2010
8:24AM - 8:36AM
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H22.00003: Insights into the epitaxial growth of graphene on SiC substrate: A computational study
Ming Yu, C.S. Jayanthi, S.Y. Wu
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Tuesday, March 16, 2010
8:36AM - 8:48AM
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H22.00004: First principles calculation of structural and electronic properties of the 5x5- SiC(0001) reconstructed surface
Alfredo Ramirez, Nancy Sandler, Randall Feenstra
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Tuesday, March 16, 2010
8:48AM - 9:00AM
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H22.00005: Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)
Byoung Don Kong, Thushari Jayasekera, Ki Wook Kim, M. Buongiorno Nardelli
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Tuesday, March 16, 2010
9:00AM - 9:12AM
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H22.00006: Charge carrier density and mobility uniformity in SiC(0001) epitaxial graphene
Conor Puls, Neal Staley, Gregory Harkay, Joshua Robinson, Ying Liu, Jeong-Sun Moon, Kurt Gaskill, Paul Campbell, Joseph Tedesco
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Tuesday, March 16, 2010
9:12AM - 9:24AM
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H22.00007: Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions
Arnaldo Laracuente, Michael Yakes, Daniel Gunlycke, Joseph Tedesco, Paul Campbell, D. Kurt Gaskill, Paul Sheehan
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Tuesday, March 16, 2010
9:24AM - 9:36AM
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H22.00008: Pronounced half integer quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Tian Shen, Adam Neal, Jiangjiang Gu, Min Xu, Michael Bolen, Michael Capano, Lloyd Engel, Peide Ye
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Tuesday, March 16, 2010
9:36AM - 9:48AM
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H22.00009: Rotational Stacking Order in C-Face Epitaxial Graphene
Jeremy Hicks, M. Sprinkle, Y. Hu, H. Tinkey, M. Clark, A. Tejeda, A. Taleb-Ibrahimi, P. Le F\`{e}vre, F. Bertran, C. Berger, W.A. de Heer, E.H. Conrad
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Tuesday, March 16, 2010
9:48AM - 10:00AM
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H22.00010: Electron Paramagnetic Resonance Studies of Multi-layer Epitaxial Graphene Formed on Semi-Insulating 4H- and 6H-SiC Substrates
E.R. Glaser, N.Y. Garces, J.C. Culbertson, A.L. Friedman, P.M. Campbell, G.G. Jernigan, J.L. Tedesco, R.L. Myers-Ward, C.R. Eddy, Jr., D.K. Gaskill
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Tuesday, March 16, 2010
10:00AM - 10:12AM
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H22.00011: Selective Graphitization of Silicon Carbide: Effect of Argon Background Pressure and Transport Measurements on the Epitaxial Graphene
Farhana Zaman, Miguel Rubio-Roy, Yike Hu, Claire Berger, Michael Moseley, James Meindl, Walt de Heer
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Tuesday, March 16, 2010
10:12AM - 10:24AM
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H22.00012: Thermoelectric characterization of large area graphene grown on SiC
Ruwantha Jayasinghe, Andriy Sherehiy, Gamini Sumanasekera, Anton Sidorov, Zhigang Jiang, Joseph Tedesco, Kurt Gaskill
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Tuesday, March 16, 2010
10:24AM - 10:36AM
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H22.00013: A New Method to Prepare Large High Quality Epitaxial Graphene Samples
Xiaozhu Yu, Choonkyu Hwang, Annemarie Kohl, David Siegel, Baisong Geng, Feng Wang, Alessandra Lanzara
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Tuesday, March 16, 2010
10:36AM - 10:48AM
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H22.00014: Nano-Objects Developing at Graphene/Silicon Carbide Interface
Shirley Chiang, Sebastien Vizzini, Hanna Enriquez, Hamid Oughaddou, Patrick Soukiassian
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Tuesday, March 16, 2010
10:48AM - 11:00AM
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H22.00015: Thermally Induced Folds in Exfoliated Graphene
Tao Jiang, Kyle Twarowski, Joel Therrien
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