Bulletin of the American Physical Society
2008 APS March Meeting
Volume 53, Number 2
Monday–Friday, March 10–14, 2008; New Orleans, Louisiana
Session W19: Dopants and Defects in Semiconductors IV
2:30 PM–5:18 PM,
Thursday, March 13, 2008
Morial Convention Center
Room: 211
Sponsoring
Unit:
DMP
Chair: Matthew McCluskey, Washington State University
Abstract ID: BAPS.2008.MAR.W19.6
Abstract: W19.00006 : Inclined Dislocation Pairs in Green GaInN/GaN Light Emitting Diodes Grown on Bulk GaN Substrate*
3:30 PM–3:42 PM
Preview Abstract Abstract
Authors:
Mingwei Zhu
(Rensselaer Polytechnic Institute)
Theeradetch Detchprohm
(Rensselaer Polytechnic Institute)
Shi You
(Rensselaer Polytechnic Institute)
Yong Xia
(Rensselaer Polytechnic Institute)
Wei Zhao
(Rensselaer Polytechnic Institute)
Yufeng Li
(Rensselaer Polytechnic Institute)
Jayantha Senawiratne
(Rensselaer Polytechnic Institute)
Christian Wetzel
(Rensselaer Polytechnic Institute)
Lianghong Liu
(Kyma Technologies, Inc.)
Edward Preble
(Kyma Technologies, Inc.)
Drew Hanser
(Kyma Technologies, Inc.)
*This work was supported by a DOE/NETL Solid-State Lighting Contract of Directed Research under DE-FC26-06NT42860.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.MAR.W19.6
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