Bulletin of the American Physical Society

2008 APS March Meeting

Volume 53, Number 2

Monday–Friday, March 10–14, 2008; New Orleans, Louisiana

Session Index

Session W19: Dopants and Defects in Semiconductors IV	Show Abstracts
Sponsoring Units: DMP Chair: Matthew McCluskey, Washington State University Room: Morial Convention Center 211

Thursday, March 13, 2008 2:30PM - 2:42PM		W19.00001: The role of nitrogen vacancies and hydrogen in conductivity of InN Anderson Janotti, Chris G. Van de Walle Preview Abstract
Thursday, March 13, 2008 2:42PM - 2:54PM		W19.00002: Thermopower measurements of n- and p-type InN J. W. Ager III, N. R. Miller, R. E. Jones, W. J. Schaff, W. Walukiewicz Preview Abstract
Thursday, March 13, 2008 2:54PM - 3:06PM		W19.00003: Site Selective CEES and Nearfield Optical Spectroscopy on Nd:GaN N. Jha, P. Capek, V. Dierolf, E. Readinger, G. Metcalfe, H. Shen, M. Wraback Preview Abstract
Thursday, March 13, 2008 3:06PM - 3:18PM		W19.00004: Excitation mechanisms of rare-earth ions in GaN Z. Fleischman, S. Penn, L. Maurer, Z. Dong, V. Dierolf Preview Abstract
Thursday, March 13, 2008 3:18PM - 3:30PM		W19.00005: First principles calculations for Gd doped GaN Chandrima Mitra, Walter Lambrecht Preview Abstract
Thursday, March 13, 2008 3:30PM - 3:42PM		W19.00006: Inclined Dislocation Pairs in Green GaInN/GaN Light Emitting Diodes Grown on Bulk GaN Substrate Mingwei Zhu, Theeradetch Detchprohm, Shi You, Yong Xia, Wei Zhao, Yufeng Li, Jayantha Senawiratne, Christian Wetzel, Lianghong Liu, Edward Preble, Drew Hanser Preview Abstract
Thursday, March 13, 2008 3:42PM - 3:54PM		W19.00007: Electrical activation studies of Al$_{0.4}$Ga$_{0.6}$N and Al$_{0.5}$Ga$_{0.5}$N implanted with silicon for n-type doping. Elizabeth Moore, Yung Kee Yeo, Mee-Yi Ryu, Robert Hengehold Preview Abstract
Thursday, March 13, 2008 3:54PM - 4:06PM		W19.00008: Effects of Dopants and Annealing on the Structure and Electronic properties of GaAsN Yu Jin, Matthew Reason, Hailing Chen, Cagliyan Kurdak, Rachel Goldman Preview Abstract
Thursday, March 13, 2008 4:06PM - 4:18PM		W19.00009: Bismuth related changes in the electronic properties of high quality dilute GaAs$_{1-x}$Bi$_{x}$. Lekhnath Bhusal, Denis Karaiskaj, Ryan France, Aaron Ptak, Angelo Mascarenhas, Tom Tiedje Preview Abstract
Thursday, March 13, 2008 4:18PM - 4:30PM		W19.00010: A defect relaxation model for the carbon vacancy in SiC Jamiyanaa Dashdorj, Mary Ellen Zvanut Preview Abstract
Thursday, March 13, 2008 4:30PM - 4:42PM		W19.00011: Direct Imaging of Point Defect Configurations for Au Atoms Inside Si Nanowires K. van Benthem, S.H. Oh, A.Y. Borisevich, W. Luo, P. Werner, N.D. Zakharov, S.T. Pantelides, S.J. Pennycook Preview Abstract
Thursday, March 13, 2008 4:42PM - 4:54PM		W19.00012: Ni doping of semiconducting boron carbide S. Adenwalla, Jing Liu, Nina Hong Preview Abstract
Thursday, March 13, 2008 4:54PM - 5:06PM		W19.00013: First principles investigations into alkali intercalation of hexagonal boron nitride Bahadir Altintas, Cihan Parlak, Resul Eryigit, Cetin Bozkurt Preview Abstract
Thursday, March 13, 2008 5:06PM - 5:18PM		W19.00014: Effects of point defects on the electrical properties of aluminum antimonide: a first principles investigation Vincenzo Lordi, Daniel {\AA}berg, Paul Erhart Preview Abstract

About APS

The American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics.

Headquarters 1 Physics Ellipse, College Park, MD 20740-3844 (301) 209-3200
Editorial Office 100 Motor Pkwy, Suite 110, Hauppauge, NY 11788 (631) 591-4000
Office of Public Affairs 529 14th St NW, Suite 1050, Washington, D.C. 20045-2001 (202) 662-8700

Bulletin of the American Physical Society

2008 APS March Meeting

Volume 53, Number 2

Monday–Friday, March 10–14, 2008; New Orleans, Louisiana

Session Index

Session W19: Dopants and Defects in Semiconductors IV

Follow Us

Engage

My APS

Information for

About APS