Wednesday, March 12, 2008
2:30PM - 3:06PM
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S19.00001: Stoichiometry driven impurity configurations in compound semiconductors
Invited Speaker:
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Wednesday, March 12, 2008
3:06PM - 3:18PM
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S19.00002: ABSTRACT WITHDRAWN
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Wednesday, March 12, 2008
3:18PM - 3:30PM
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S19.00003: Carrier compensation in semi-insulating CdTe
Mao-Hua Du, David Singh
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Wednesday, March 12, 2008
3:30PM - 3:42PM
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S19.00004: Gadolinium Doping in ZnTe
Z.X. Ma, Lei Liu, Kin Man Yu, Wladek Walukiewicz, Dale Perry, Peter Yu, Sam Mao
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Wednesday, March 12, 2008
3:42PM - 3:54PM
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S19.00005: First Principles Investigation of H in CdTe
Hiroyuki Takenaka, David J. Singh, Mao-Hua Du
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Wednesday, March 12, 2008
3:54PM - 4:06PM
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S19.00006: Origin of doping bottleneck in semiconductor quantum dots
Su-Huai Wei, Jingbo Li, Shu-Shen Li, Jian-Bai Xia
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Wednesday, March 12, 2008
4:06PM - 4:18PM
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S19.00007: Increased binding energy of impurities near a semiconductor vacuum interface.
Paul Koenraad, Ineke Wijnheijmer, Jens Garleff, Karin Teichmann, Martin Wenderoth, Sebastian Loth, R. Ulbrich
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Wednesday, March 12, 2008
4:18PM - 4:30PM
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S19.00008: First-principles simulations of GaAs defects: The challenge of Ga pseudopotentials
Peter A. Schultz, O. Anatole von Lilienfeld
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Wednesday, March 12, 2008
4:30PM - 4:42PM
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S19.00009: Computational studies of a 2D tight-binding model of randomly dispersed hydrogenic centers
Jayson Paulose, Ravindra Bhatt
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Wednesday, March 12, 2008
4:42PM - 4:54PM
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S19.00010: Quenched singularity in the density of states of 2D random hydrogenic systems
R.N. Bhatt, Erik Nielsen, Jayson Paulose
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Wednesday, March 12, 2008
4:54PM - 5:06PM
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S19.00011: Negative magnetocapacitance and associated Schottky barrier height changes in lightly doped GaAs
Sefaattin Tongay, Arthur Hebard
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Wednesday, March 12, 2008
5:06PM - 5:18PM
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S19.00012: Thermally activated persistent photoconductivity {\&} donor binding energy in high mobility AlAs QWs
S. Dasgupta, C. Knaak, A. Fontcuberta, M. Bichler, G. Abstreiter, M. Grayson
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Wednesday, March 12, 2008
5:18PM - 5:30PM
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S19.00013: The low-temperature 2D mobility for metallic p-type GaAs Quantum Well
Theodore Castner
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