Bulletin of the American Physical Society

2008 APS March Meeting

Volume 53, Number 2

Monday–Friday, March 10–14, 2008; New Orleans, Louisiana

Session Index

Session A6: Novel Channel Materials for CMOS Technology	Show Abstracts
Sponsoring Units: FIAP Chair: Matthew Copel, IBM Thomas J. Watson Research Center Room: Morial Convention Center RO4

Monday, March 10, 2008 8:00AM - 8:36AM		A6.00001: III-V MOSFETs: From Materials {\&} Physics to Devices Invited Speaker: Preview Abstract
Monday, March 10, 2008 8:36AM - 9:12AM		A6.00002: Stability of Metal Oxide/Ge and Metal Oxide/III-V Interfaces and Implications for Low Defect Density MOS Devices Invited Speaker: Preview Abstract
Monday, March 10, 2008 9:12AM - 9:48AM		A6.00003: Dangling-bond defects and hydrogen passivation in germanium Invited Speaker: Preview Abstract
Monday, March 10, 2008 9:48AM - 10:24AM		A6.00004: Scanning-tunneling microscopy and spectroscopy of oxide deposition on III-V semiconductor surfaces Invited Speaker: Preview Abstract
Monday, March 10, 2008 10:24AM - 11:00AM		A6.00005: Monte Carlo simulations of carrier flow in novel gate materials Invited Speaker: Preview Abstract

About APS

The American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics.

Headquarters 1 Physics Ellipse, College Park, MD 20740-3844 (301) 209-3200
Editorial Office 100 Motor Pkwy, Suite 110, Hauppauge, NY 11788 (631) 591-4000
Office of Public Affairs 529 14th St NW, Suite 1050, Washington, D.C. 20045-2001 (202) 662-8700

Bulletin of the American Physical Society

2008 APS March Meeting

Volume 53, Number 2

Monday–Friday, March 10–14, 2008; New Orleans, Louisiana

Session Index

Session A6: Novel Channel Materials for CMOS Technology

Follow Us

Engage

My APS

Information for

About APS