Bulletin of the American Physical Society

2006 APS March Meeting

Monday–Friday, March 13–17, 2006; Baltimore, MD

Session Index

Session W46: Compound Semiconductor Defects and Dopants	Show Abstracts
Sponsoring Units: FIAP Chair: H. T. Johnson, University of Illinois, Champagne Room: Baltimore Convention Center 349

Thursday, March 16, 2006 2:30PM - 2:42PM		W46.00001: Silicon-interstitials-based Benchmarking of DFT Exchange-correlation Potentials K. P. Driver, W. D. Parker, R. G. Hennig, J. W. Wilkins, C. J. Umrigar, R. Martin, E. Batista, B. Uberuaga, J. Heyd, G. Scuseria Preview Abstract
Thursday, March 16, 2006 2:42PM - 2:54PM		W46.00002: Random doping and oxide roughness induced fluctuations in nanoscale semiconductor devices Petru Andrei Preview Abstract
Thursday, March 16, 2006 2:54PM - 3:06PM		W46.00003: Thermodynamics of semiconductor doping and stoichiometry from first-principles methods Stephan Lany, Alex Zunger Preview Abstract
Thursday, March 16, 2006 3:06PM - 3:18PM		W46.00004: Stoichiometry Driven Impurity Configurations in Compound Semiconductors G. Chen, I. Miotkowski, S. Rodriguez, A. K. Ramdas Preview Abstract
Thursday, March 16, 2006 3:18PM - 3:30PM		W46.00005: \textit{Ab initio }studies of defects in CdTe and HgTe with symmetrized basis Yia-Chung Chang, Hyejung Kim Preview Abstract
Thursday, March 16, 2006 3:30PM - 3:42PM		W46.00006: Dislocation filtering by buffer layer interfaces in InSb/Al$_{x}$In$_{1-x}$Sb heterostructures grown on GaAs (001) substrates Madhavie EdirIsooriya, Tetsuya Mishima, Michael Santos Preview Abstract
Thursday, March 16, 2006 3:42PM - 3:54PM		W46.00007: Thermodynamic model for the structure of the 90 degree partial dislocation in diamond cubic semiconductors. S. P. Beckman, D. C. Chrzan Preview Abstract
Thursday, March 16, 2006 3:54PM - 4:06PM		W46.00008: Strain relaxation and crystal quality in compositionally graded GaAsSb/GaAs metamorphic buffer layers Benny Perez Rodriguez, Joanna Mirecki Millunchick Preview Abstract
Thursday, March 16, 2006 4:06PM - 4:18PM		W46.00009: Mutual Passivation of Donors and Isovalent Nitrogen in GaAs Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, Jian-Bai Xia Preview Abstract
Thursday, March 16, 2006 4:18PM - 4:30PM		W46.00010: Effect of indium on the localized vibrational mode of nitrogen in GaN$_x$As$_{1-x}$ A. M. Teweldeberhan, Stephen Fahy Preview Abstract
Thursday, March 16, 2006 4:30PM - 4:42PM		W46.00011: Effects of edge and screw dislocations on optical properties of Wurtzite GaN Jeong Ho You, H.T. Johnson Preview Abstract
Thursday, March 16, 2006 4:42PM - 4:54PM		W46.00012: Vacancy induced localized states in graphene J.M.B. Lopes dos Santos, Vitor M. Pereira, F. Guinea, N.M.R. Peres, A.H. Castro Neto Preview Abstract
Thursday, March 16, 2006 4:54PM - 5:06PM		W46.00013: Low temperature photoluminescence in the strongly disordered dilute nitride GaAsN. Ivana Bosa, Dermot McPeake, Stephen Fahy Preview Abstract

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Bulletin of the American Physical Society

2006 APS March Meeting

Monday–Friday, March 13–17, 2006; Baltimore, MD

Session Index

Session W46: Compound Semiconductor Defects and Dopants

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