Thursday, March 16, 2006
11:15AM - 11:27AM
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V46.00001: Pathway connecting the four-interstitial ground state and chain in silicon
Yaojun Du, Thomas Lenosky, Stefan Goedecker, Richard Hennig, John Wilkins
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Thursday, March 16, 2006
11:27AM - 11:39AM
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V46.00002: Recombination rate annealing following transient neutron irradiation
Harold Hjalmarson, Peter Schultz, Normand Modine
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Thursday, March 16, 2006
11:39AM - 11:51AM
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V46.00003: Theory of the Cyclotron Resonance in Si and Ge
Shigeji Fujita, Robert Simion, Rohit Singh, Seiichi Watanabe
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Thursday, March 16, 2006
11:51AM - 12:03PM
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V46.00004: Stability of strained monohydride H:Si(105) and H:Ge(105) surfaces
Cristian V. Ciobanu, Ryan M. Briggs
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Thursday, March 16, 2006
12:03PM - 12:15PM
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V46.00005: Using Si(100) - 2 x 1:H as a Platform for Patterned Silicon Growth
Matthew M. Sztelle, Scott W. Schmucker, Joseph W. Lyding
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Thursday, March 16, 2006
12:15PM - 12:27PM
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V46.00006: Hole mobility in SiGe alloys from first principles.
Sian Joyce, Felipe Murphy-Armando, Stephen Fahy
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Thursday, March 16, 2006
12:27PM - 12:39PM
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V46.00007: First-principles calculation of phonon scattering of n-type carriers in SiGe alloys
Felipe Murphy Armando, Stephen Fahy
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Thursday, March 16, 2006
12:39PM - 12:51PM
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V46.00008: MEIS study of As and Sb implantation in Si(001) with excess vacancy concentration and SIMOX.
Mateus Dalponte, Henri Boudinov, Lyudmila Goncharova, Eric Garfunkel, Torgny Gustafsson
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Thursday, March 16, 2006
12:51PM - 1:03PM
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V46.00009: DFT calculations of formation energy and properties of Frenkel pairs in Si
Matthew J. Beck, S. T. Pantelides
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Thursday, March 16, 2006
1:03PM - 1:15PM
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V46.00010: Effect of Hydrogen on the Migration Processes of Dislocations in Silicon
Norihisa Oyama, Takahisa Ohno
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Thursday, March 16, 2006
1:15PM - 1:27PM
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V46.00011: Self-trapping-enhanced carrier recombination at light-induced boron-oxygen complexes in silicon
Shengbai Zhang, Mao-Hua Du, Howard Branz, Richard Crandall
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Thursday, March 16, 2006
1:27PM - 1:39PM
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V46.00012: Energy gain by defect formation: a new tight binding annealed model for a-Si
Joseph Feldman, Noam Bernstein, Marco Fornari, Dimitris Papaconstantopoulos
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Thursday, March 16, 2006
1:39PM - 1:51PM
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V46.00013: Effect of e-h Pairs on the Stability of Bond-Center Hydrogen in Silicon
Nageswara Rao Sunkaranam, Sriram Dixit, Gunter Lupke, Norman Tolk, Leonard Feldman
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