Bulletin of the American Physical Society
76th Annual Gaseous Electronics Conference
Volume 68, Number 9
Monday–Friday, October 9–13, 2023; Michigan League, Ann Arbor, Michigan
Session GF2: Basic Plasma Phenomena II |
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Chair: Louis Jose, University of Michigan Room: Michigan League, Henderson |
Friday, October 13, 2023 10:00AM - 10:15AM |
GF2.00001: Electromagnetic particle-in-cell simulations of surface wave effects in various plasmas Denis Eremin, Efe Kemaneci, Peter Awakowicz, Thomas Mussenbrock, Ralf Peter Brinkmann Surface waves emerge in bounded plasmas due to a layered structure of the discharge, |
Friday, October 13, 2023 10:15AM - 10:30AM |
GF2.00002: Bremsstrahlung Emission in Strongly Coupled Plasmas Julian Kinney, Scott D Baalrud, Heath J LeFevre, Carolyn C Kuranz Bremsstrahlung absorption and emission are important in extreme ultraviolet (EUV) lithography during laser absorption and for radiation transport within the plasma itself. Furthermore, plasmas created in EUV lithography can often be in an intermediate coupling regime, where the average kinetic energy of particles is on the order of the potential energy at the average interparticle spacing. Classical bremsstrahlung emission theory consists of a binary collision model and linear-dielectric approach developed for weakly coupled plasmas [1]. In order to test these classical theories in strongly coupled plasmas, we consider a two-component plasma with repulsively interacting species and calculate the emission spectrum from classical molecular dynamics simulations for plasmas with coupling strengths between 0.01-100. The spectra at different coupling strengths differ in two major ways. Firstly, emission greater than the plasma frequency is largely determined by binary collisions. In this regime, we find that binary collision models using Coulomb or Debye-Hückel potentials are no longer adequate to describe the resulting spectra. Instead, we consider particle interactions mediated by the potential of mean force [2]. Secondly, for emission much lower than the plasma frequency, the spectra are dependent on the interspecies collision frequency. We present a model based on the velocity autocorrelation function to capture the spectrum in this low frequency limit. |
Friday, October 13, 2023 10:30AM - 11:00AM |
GF2.00003: Modeling of surface electron emission with plasma interaction and space charge waves Invited Speaker: Peng Zhang Electron emission from surfaces is of fundamental importance to both basic plasma physics and the development of advanced plasma sources and systems. Accurate modeling of electron emission processes is essential to the understanding of plasma breakdown and discharge, plasma-surface interaction, and initiation of plasma instabilities. Electron emission physics is also important to electron sources and beams, particle accelerators, pulsed power systems, vacuum electronics, and advanced radiation sources. This talk presents recent advances in our generalized quantum mechanical modeling of electron emission from surfaces under various combination of background field (DC or RF bias) and optical field (different laser wavelength, laser intensity, pulse duration, carrier-envelope phase (CEP), multi-color mixture, etc), by exactly solving the time-dependent Schrödinger equation [1-8]. The effects of laser heating, dielectric surface coating, and resonant tunneling will be addressed. Also highlighted is the dynamics of plasma formation with strong surface electron emission due to photoemission or secondary electron emission [9], as well as dispersion of space charge waves on the surface emitted beams [10]. |
Friday, October 13, 2023 11:00AM - 11:15AM |
GF2.00004: Vibrationally Excited Fluxes to Wafers in Plasma Processing Evan Litch, Hyunjae Lee, Sang Ki Nam, Mark Kushner Semiconductor plasma processing employs molecular gases to produce fluxes of radical and ions to wafers (for device fabrication) and reactor walls (for chamber cleaning). Although emphasis is typically on producing radicals and ions, the fluxes of vibrationally excited species to surfaces can exceed those of radicals and ions. These vibrationally excited species bring with them activation energy that can affect surface processes as well as deliver a power flux to the wall. In this work results from a computational investigation of inductively coupled plasmas (ICPs), of the type used for semiconductor processing, sustained in Ar/N2/O2 mixtures will be discussed from the perspective of quantifying vibrationally excited fluxes incident onto surfaces. The simulations were conducted with the Hybrid Plasma Equipment Model (HPEM). Ar/N2/O2 mixtures were used as a surrogate for actual plasma processing gas mixtures as reaction mechanisms are available for electron impact, V-V and V-T collisions for these gases. In low pressure systems as used in plasma etching (pressures of < tens mTorr) the vibrational distributions that arrive at surfaces are dominated by the initial electron impact excitation processes. The V-V and V-T collisions that shape these vibrational distributions have low frequencies at these pressures. At pressures typically used in plasma enhanced chemical vapor deposition (a few to 10 Torr), V-V and V-T collisions become more important in shaping the vibrational distributions incident onto surfaces. |
Friday, October 13, 2023 11:15AM - 11:30AM |
GF2.00005: Argon chemical kinetics model with uncertainty quantification for simulations of a capacitively coupled plasma discharge Juan P Barberena-Valencia, Todd A Oliver, Laxminarayan L Raja, Robert D Moser In a non-equilibrium plasma discharge model, an accurate finite-rate chemistry mechanism is required to capture correctly all the reactive collisional phenomena that occur in the discharge. A pure argon chemistry mechanism was developed to be used in high pressure (>1 Torr), non-equilibrium plasma discharges, and a preliminary validation assessment under uncertainty was performed against experimental data. The validation target is the number density of the higher excited states belonging to the 4p manifold. The kinetic model includes 6 species (E, Ar+, Arm, Arr, Ar4p and Ar) and 34 reactions. Rate coefficients for electron-impact processes were obtained by integrating the cross-sections through BOLSIG+, and their uncertainties were quantified according to the scatter of the data in the literature, whereas for heavy-heavy reactions, the rate coefficients were obtained directly from the literature. Current comparison with experimental data shows a good agreement, especially in the 1 Torr regime. Simulations at higher pressures are currently being done. |
Friday, October 13, 2023 11:30AM - 11:45AM |
GF2.00006: Ferroelectrics-induced Surface Charge in Plasma Ning Liu, Yijie Xu, Xingqian Mao, Yiguang Ju, Ying Lin As more renewable energy enters the market, plasma-assisted manufacturing is one way to utilize electrical power in a turnkey process. Compared to the traditional hightemperature equilibrium process, plasma-assisted methods are pursued as promising techniques for non-equilibrium energy-efficient manufacturing using new reaction pathways. However, there are scientific challenges in simultaneously manipulating plasma discharge and surface reactions directly and efficiently, to enable energy efficient plasma-assisted manufacturing. In this work, we experimentally manipulate plasma properties by creating the surface charge via ferroelectrics materials, lead zirconate titanate. Ferroelectric materials are chosen due to their unique feature of spontaneous polarization, which will generate surface charge to interact with electrons in the plasma. The surface charge is expected to influence the electron properties in the plasma, resulting in changes to plasma performance. The surface charge induced by ferroelectrics materials was measured by Sawyer-Tower method, and the electric field as one key plasma property was measured by electric-fieldinduced second-harmonic generation. This work paves the way for controlling and improving the plasma-assisted chemical manufacturing process, e.g., plasmaassisted catalytic NH3 synthesis. |
Friday, October 13, 2023 11:45AM - 12:00PM |
GF2.00007: New micro-plasma reactors for the synthesis of heterostructures of 2D films of hexagonal boron nitride and graphene Abd-Almalik Halfaoui, Gérard Bauville, Pascal Jeanney, Stéphane Pasquiers, Joao Santos Sousa Graphene is a material of choice for a wide range of promising technological applications in nano- and optoelectronics. To prevent the hindrances of the substrate, graphene can be encapsulated in a material that preserves its properties. The search for new substrates revealed that hexagonal Boron Nitride (h-BN) buffer layers can preserve the properties of graphene [1], thus potentially leading to new disruptive technologies. To try to answer this issue, our work focuses on the development of a new deposition process using a new micro-plasma configuration based on the classical Micro-Hollow Cathode Discharge (MHCD), which has shown promising perspectives [2-4]. |
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