Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session HT4: Poster Session I (4:00-6:00pm, JST)
4:00 PM,
Tuesday, October 4, 2022
Sendai International Center
Room: Sakura 1
Abstract: HT4.00095 : Improvement of gene transfer efficiency for establishing cells with higher safety for gene therapy by using surface discharge*
Presenter:
Kenjirou Ohnishi
(Department of Electrical and Electronic Engineering of Ehime University)
Authors:
Kenjirou Ohnishi
(Department of Electrical and Electronic Engineering of Ehime University)
Susumu Satoh
(i-Gene Corporation)
Satomi Ihara
(Department of Electrical and Electronic Engineering of Ehime University)
Masafumi Jinno
(Department of Electrical and Electronic Engineering of Ehime University, i-Gene Corporation,)
Collaboration:
Yugo Kido
It is difficult to establish safe cells for gene therapy with conventional gene transfer methods that are not free from causing damage to cells. Therefore, we investigate the safety of the established cells with surface discharge by comparing them with conventional gene transfer methods.
As a result, more expressed cells were produced efficiently by one treatment. In addition, the surface discharge method causes few random integrations into chromosomes. We reported that the complex stimuli of electrical and chemical factors generated by a discharge plasma promote gene introduction via endocytosis.
The surface discharge method enables us to collect efficiently expressed cells in only one treatment and reduce random integration. The surface discharge method is expected to bring a safe gene therapy.
*Part of this work was supported by JSPS KAKENHI Grant Numbers JS21H04455 and JP17H01068 and AMED under Grant Number JP201m020314 and JP211m0203007.
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