Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session HT4: Poster Session I (4:00-6:00pm, JST)
Tuesday, October 4, 2022
Sendai International Center Room: Sakura 1
Abstract: HT4.00077 : Deposition of nitrogen doped amorphous carbon film using high power impulse magnetron sputtering
A negative pulse voltage with a frequency of 400 Hz was applied to the carbon target. The pulse duration was 10 µs and the peak power density was 1.2 kW/cm2. The flow rate ratio of N2 gas to Ar gas was varied from 0 to 20% at the pressure of 0.5 Pa and the total flow rate of 10 sccm.
ID/IG ratio, which is due to disorder and graphite band, was evaluated by Raman scattering spectroscopy. ID/IG ratio increased and the G peak position shifted to the higher wavenumber with increasing the nitrogen gas flow rate ratio. These results indicate that the incorporation of nitrogen induces an increase and clustering of sp2 bond.
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