Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session HT4: Poster Session I (4:00-6:00pm, JST)
4:00 PM,
Tuesday, October 4, 2022
Sendai International Center
Room: Sakura 1
Abstract: HT4.00076 : TiN Film Formation by Linear and Novel Winding Filtered-Arc Deposition*
Presenter:
Yoshinori Saiki
(Toyohashi University of Technology)
Authors:
Yoshinori Saiki
(Toyohashi University of Technology)
Jumpei Kito
(Toyohashi University of Technology)
Yuki Hashimoto
(Toyohashi University of Technology)
Takahiro Bando
(Toyohashi University of Technology)
Toru Harigai
(Toyohashi University of Technology)
Hirofumi Takikawa
(Toyohashi University of Technology)
Hiroki Gima
(OSG Coating Service Co.,Ltd.)
Hiroaki Sugita
(OSG Coating Service Co.,Ltd.)
In this study, we attempted to form TiN films by two types of FAD systems having an electromagnetic coil on the outside of the connection duct (duct coil). One was a traditional linear-FAD (L-FAD) with a cylindrical anode as a part of FAD system. The other was newly designed winding-FAD (W-FAD) with a winding shape anode. The anode was composed of C-ring-shaped copper plates assembled into a coiled shape. Therefore, the anode in W-FAD generated magnetic field by arc current itself to transport the vacuum arc plasma tunneling the anode as well as to block the flying MPs. As a result, it was found that the number of MPs on the 1-micron thick film prepared by W-FAD were excellently few compared to that on the film prepared by L-FAD.
*This work was partly supported by JSPS KAKENHI Grant Number 22H01470.
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