Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session HT4: Poster Session I (4:00-6:00pm, JST)
4:00 PM,
Tuesday, October 4, 2022
Sendai International Center
Room: Sakura 1
Abstract: HT4.00110 : Initial growth of graphene on copper foil in non-equilibrium atmospheric pressure remote plasma CVD
Presenter:
Akihiro Kajino
(Meijo University)
Authors:
Akihiro Kajino
(Meijo University)
Yusuke Sakai
(Meijo University)
Keigo Takeda
(Meijo University)
Mineo Hiramatsu
(Meijo University)
Initial growth of graphene on copper foil in microwave-excited non-equilibrium atmospheric pressure remote plasma (MN-APP) using a CH4/H2/He gas mixture has been investigated in this study.
Since the growth of graphene in the plasma enhanced chemical vapor deposition (PEVD) is driven by surface reactions of radicals generated by the plasma, it is important to identify the radicals in order to elucidate its growth process. Therefore, measurement of C2 radicals generated in the MN-APP was also carried out using absorption spectroscopy.
At low CH4 flow rate, the variation in graphene size at each process time was very small, although the variation increased with the increase in the process time at the high CH4 flow rate. Therefore, at low CH4 flow rate, the flux of precursors supplied from the MN-APP are relatively low and mainly consumed for the planar growth of graphene without inducing subsequent nucleation after the initial nucleation. However, the excess supply of precursors would induce subsequent nucleation after the initial nucleation.
In these conditions, the C2 radical density was estimated to be less than the order of 1012 cm-3 by absorption spectroscopy.
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