Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session ER2: Plasma Etching
10:00 AM–12:00 PM,
Thursday, October 6, 2022
Sendai International Center
Room: Hagi
Chair: Hirotaka Toyoda
Abstract: ER2.00001 : Low Bias Frequencies for High Aspect Ratio Plasma Etching*
10:00 AM–10:15 AM
Presenter:
Evan Litch
(University of Michigan)
Authors:
Evan Litch
(University of Michigan)
Hyunjae Lee
(Mechatronics Research, Samsung Electronics Co., Ltd.,)
Sang Ki Nam
(Mechatronics Research, Samsung Electronics Co., Ltd.,)
Mark J Kushner
(University of Michigan)
In this paper results from a computational investigation of ICPs and CCPs using very low bias frequencies will be discussed. The simulations, conducted with the Hybrid Plasma Equipment Model (HPEM), investigated two test systems – an ICP sustained in Ar/Cl2 and a 2-frequency CCP sustained in Ar/C4F8/O2. IEADs, uniformity of fluxes to the wafer and sheath structure for these systems for substrate biases as low as 100 kHz will be discussed.
*Work was supported by Samsung Electronics Co. and the US National Science Foundation (2009219).
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700