Bulletin of the American Physical Society
67th Annual Gaseous Electronics Conference
Volume 59, Number 16
Sunday–Friday, November 2–7, 2014; Raleigh, North Carolina
Session PR2: Plasma Deposition and Nanoparticle Generation |
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Chair: Kazuo Takahashi, Kyoto Institute of Technology Room: State C |
Thursday, November 6, 2014 1:30PM - 1:45PM |
PR2.00001: Surface modifications by plasma produced nanoparticles Johannes Berndt, Pascal Brault Low temperature plasmas with their distinct non equilibrium character are a versatile tool for the production and subsequent deposition of nanoparticles. This contribution will focus on two aspects: on strategies to control the formation of nanoparticles in reactive low temperature plasmas and on the production and functionalization of nanoparticle- deposits. The importance of such nanoparticle-deposits will be discussed on the basis of two examples: the production of surfaces with switchable wetting properties and the decoration of surfaces with nanoparticles for fuel cell applications. [Preview Abstract] |
Thursday, November 6, 2014 1:45PM - 2:00PM |
PR2.00002: Nickel Nanoparticles Production using Pulsed Laser Ablation under Pressurized CO$_{2}$ Mardiansyah Mardis, Noriharu Takada, Siti Machmudah, Wahyu Diono, Hideki Kanda, Koichi Sasaki, Motonobu Goto We used nickel (Ni) plate as a target and irradiated pulse laser ablation with a fundamental wavelength of 1064 nm under pressurized CO$_{2}$. The Ni plate was ablated at various pressure (5--15 MPa), temperature (15--80${^\circ}$), and irradiation time (3--30 min). The method successfully generated Ni nanoparticles in various shape and size. Generated Ni nanoparticles collected on a Si wafer and the ablated Ni plate were analyzed by Field Emission Scanning Electron Microscope (FE-SEM). With changing pressure and temperature, the structures of Ni nanoparticles also changed. The shape of generated particles is sphere-like structure with diameter around 10-100 nm. Also it was observed that a network structure of smaller particles was fabricated. The mechanism of nanoparticles fabrication could be explained as follows. Ablated nickel plate melted during the ablation process and larger particles formed, then ejected smaller spherical nanoparticles, which formed nanoclusters attached on the large particles. This morphology of particles was also observed for gold and silver nanoparticles with same condition. Further, the optical emission intensity from ablation plasma and the volume of the ablated crater were also examined under pressurized CO$_{2}$. [Preview Abstract] |
Thursday, November 6, 2014 2:00PM - 2:30PM |
PR2.00003: Plasmas for controlling the synthesis of semiconductor nanocrystals Invited Speaker: Rebecca Anthony Recently, nonthermal plasma synthesis of opto-electronically active semiconductor nanomaterials has attracted interest. The plasma reactor is especially attractive for synthesis of some earth-abundant and nontoxic semiconductor nanocrystals (NCs), such as silicon and gallium nitride. These materials, with high melting temperatures, are more challenging to grow using the liquid-phase techniques that are successful for other materials, such as II-VI NCs. Here, plasma synthesis of high-quality NCs from these materials will be discussed, including investigations on controlling the NCs' light emission properties via physical changes in the NCs brought about by altering the plasma parameters. For example, nanoparticle crystallinity may be controlled by altering the power supplied to the plasma reactor, which has been revealed to influence both the density of atomic hydrogen and the ion density in the plasma. In addition, the surfaces of NCs (which have been shown to be crucial in determining NC luminescence properties) can be altered utilizing reactions that take place in the plasma after NC growth is finished. The features of the plasma reactor provide unique and selective control over the properties of NCs, and also allow for deposition of dense films of NCs directly from the gas-phase, in complete avoidance of liquid-phase methods. These features - crystallization of environmentally benign materials, capacity to control NC surfaces via plasma-intiated reactions, and direct deposition of these materials onto device substrates -- unite in a method for ``green'' processing of nanomaterials. Future directions for utilizing plasma reactors for nanomaterials synthesis and processing will also be discussed. [Preview Abstract] |
Thursday, November 6, 2014 2:30PM - 2:45PM |
PR2.00004: Novel method of Ge crystalline thin film deposition on SiO2 by sputtering Masaharu Shiratani, Daiki Ichida, Hyunwoong Seo, Naho Itagaki, Kazunori Koga We are developing a novel method of Ge crystalline thin film deposition on SiO2 by sputtering. For the method, very thin Au films were deposited on SiO2 substrates and then Ge atoms were irradiated to the Au films by sputtering. By EDX and SEM measurements, we found two kinds of Ge film growth: one is Ge film formation on Au films for a high flux irradiation of Ge, and the other is Ge film formed between Au films and SiO2 substrates for a relatively low flux irradiation of Ge. The latter film formation is useful to create high quality Ge crystalline films on various kinds of substrate with aligned crystal orientation and a large grain size. XRD and Raman measurements show the films are Ge crystal and the better crystallinity for the higher substrate temperature. Surface morphology depends on the substrate temperature. At 180-250C Ge islands of 50 nm in diameter are formed on surface. Smooth Au films are obtained at 320C. Au aggregates of 100 nm in diameter are formed on surface at 400C. The Ge films show a high absorption coefficient for a wide light wavelength range from 400 nm to 1100 nm and photo generated current in the same wavelength range. [Preview Abstract] |
Thursday, November 6, 2014 2:45PM - 3:00PM |
PR2.00005: Surface modification due to atmospheric pressure plasma treatment during film growth of silicon dioxide like and amorphous hydrogenated carbon material Katja Ruegner, Ruediger Reuter, Achim von Keudell, Jan Benedikt Plasma deposition of silicon dioxide (SiO$_{\mathrm{2}})$ or amorphous hydrogenated carbon (a-C:H) at atmospheric pressure is a promising tool for industrial applications. SiO$_{\mathrm{2}}$ is used as scratch resistant layers, as protection against corrosion or as gas diffusion barrier layers. a-C:H is of special interest due to its optical, electrical, biocompatible and mechanical properties, which are tunable, depending on the bonding state of carbon. Besides the deposition of material, atmospheric pressure plasma jets (APPJ) can be used to modify the surface of the deposited films during their growth. Deposition and the treatment are realized in the same chamber, were both jets face a rotating substrate. Therefore, deposition and treatment of the same trace can be performed in an alternating manner. Further, in-situ FTIR is applied. For the deposition an APPJ with two parallel electrodes is used, operating with either He/HMDSO in the case of SiO$_{\mathrm{2}}$ deposition or He/C$_{\mathrm{2}}$H$_{\mathrm{2}}$ in the case of a-C:H deposition. For the treatment either the APPJ or a coaxial jet with different gas mixtures is used. For the deposition of SiO$_{\mathrm{2}}$-like films the treatment with a He/O$_{\mathrm{2}}$, a He/N$_{\mathrm{2}}$, and an Ar plasma during the film growth have shown significant changes in the film structure. The influence of treatments on a-C:H film is currently under investigation. [Preview Abstract] |
Thursday, November 6, 2014 3:00PM - 3:15PM |
PR2.00006: Comparison of sticking probabilities of metal atoms in magnetron sputtering deposition of CuZnSnS films K. Sasaki, S. Kikuchi In this work, we compared the sticking probabilities of Cu, Zn, and Sn atoms in magnetron sputtering deposition of CZTS films. The evaluations of the sticking probabilities were based on the temporal decays of the Cu, Zn, and Sn densities in the afterglow, which were measured by laser-induced fluorescence spectroscopy. Linear relationships were found between the discharge pressure and the lifetimes of the atom densities. According to Chantry (P.~J.~Chantry, J.~Appl.~Phys. \textbf{62}, 1141 (1987)), the sticking probability is evaluated from the extrapolated lifetime at the zero pressure, which is given by ${2l_0(2-\alpha)}/(\bar{v}\alpha)$ with $\alpha$, $l_0$, and $\bar{v}$ being the sticking probability, the ratio between the volume and the surface area of the chamber, and the mean velocity, respectively. The ratio of the extrapolated lifetimes observed experimentally was $\tau_{\rm Cu}:\tau_{\rm Sn}:\tau_{\rm Zn}=1:1.3:1$. This ratio coincides well with the ratio of the reciprocals of their mean velocities ($1/\bar{v}_{\rm Cu}:1/\bar{v}_{\rm Sn}:1/\bar{v}_{\rm Zn} =1.00:1.37:1.01$). Therefore, the present experimental result suggests that the sticking probabilities of Cu, Sn, and Zn are roughly the same. [Preview Abstract] |
(Author Not Attending)
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PR2.00007: RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications Lutfi Oksuz, Melek Kiristi, Ferhat Bozduman, Aysegul Uygun Oksuz Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400--800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO$_3$-TiO$_2$ thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1 {\%}wt) target with purity of 99.9{\%} in a mixture gas of argon and oxygen. As a counter electrode layer, V$_2$O$_5$ film was deposited on an ITO/glass substrate using V$_2$O$_3$ target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of $\pm$3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between $\pm$3 V at a scan rate of 50 mV/s. [Preview Abstract] |
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