Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session VF2: Plasma Deposition III |
Hide Abstracts |
Chair: Masaharu Shiratani, Kyushu University Room: Petit Amphitheatre |
Friday, October 8, 2010 4:00PM - 4:30PM |
VF2.00001: Purified Si Film Formation from Metallurgical-Grade Si by Hydrogen Plasma Induced Chemical Transport Invited Speaker: Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by chemical transport using subatmospheric-pressure H$_{2}$ plasma. The purification mechanism is based on the selective etching of Si by atomic H. Since most metals are not etched by H, this process is efficient to reduce metal impurities in Si films. It is demonstrated that the concentrations of most metal impurities (Fe, Mn, Ti, Co, Cr, Ni, etc.) in the prepared Si film are in the acceptable range for applying it to solar-grade Si (SOG-Si) material, or below the determination limit of the present measurements. On the other hand B and P atoms, which make volatile hydrogen compounds such as B$_{2}$H$_{6}$ and PH$_{3}$, are difficult to eliminate by the present principle. From the infrared absorption measurements of the etching product produced by the reaction between H$_{2}$ plasma and MG-Si, it is found that the main etching product is SiH$_{4}$. Therefore, a remote-type chemical transport process is possible to produce SiH$_{4}$ gas directly from MG-Si. Combining other purifying principle (such as a pyrolysis filter), this process may have an advantage to eliminate B$_{2}$H$_{6}$ and PH$_{3}$ from the produced SiH$_{4}$ gas. [Preview Abstract] |
Friday, October 8, 2010 4:30PM - 4:45PM |
VF2.00002: Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition Hajime Shirai, Daisuke Ohba, Zeguo Tang, Chien-Hui Lai The surface chemistry of chlorinated hydrogenated microcrystalline silicon ($\mu$c-Si:H:Cl) films with preferred (111) and (220) crystal orientations was investigated using a radio-frequency (rf) plasma-enhanced chemical vapor deposition (PE-CVD) of a dichlorosilane (SiH$_{2}$Cl$_{2})$ and H$_{2}$ mixture. The growing surface for the preferred (220) crystal oriented $\mu$c-Si:H:Cl films included much micro-roughness, voids, and dangling bonds, which was chemically active to the hydrogen and argon plasma exposure. On the other hand, the growing surface with the preferential (111) crystal orientation was chemically stable relatively. These findings suggest that the sticking process of deposition precursors and/or the reconstruction of Si clusters within the sub-surface region including micro-roughness and dangling bond determine the growth of the preferential (220) crystal orientation. The determining factor for the preferential crystal orientation is discussed in the growth of $\mu$c-Si:H:Cl films. [Preview Abstract] |
Friday, October 8, 2010 4:45PM - 5:00PM |
VF2.00003: How much water we have in silane-oxygen plasma during SiO2 deposition in HDP-PECVD reactor Pavel Bulkin, Tatiana Novikova, Dmitri Daineka, Roelene Botha Deposition of SiO2 from silane and oxygen plasma is an integral part of microelectronics technology. While extensively studied and published about, the process is however still not completely understood. In our work we discuss the importance of such reaction by-product as water. We show that H2O is the major component of deposition atmosphere, despite being ignored in many studies. Analysis of pressure changes dynamics, study of the gas composition using QMS and OES and films analysis by spectroscopic ellipsometry and transmission spectroscopy suggest that the water produced in the deposition can account for considerable part of molecular flux onto the wafer surface. Using controlled nonuniformity of silane delivery by injecting SiH4 through capillary and comparing the spatial variations of material quality with case of uniform injection through gas ring we suggest new explanation for OH incorporation into SiO2 film during the growth. Data are corroborated by DSMC gas flow modeling using phenomenological approach for description of surface reactions. [Preview Abstract] |
Friday, October 8, 2010 5:00PM - 5:15PM |
VF2.00004: Plasma induced chemistry of self-assembled nanoparticles and underlying surface for High-k film growth Takeshi Kitajima, Toshiki Nakano The novel film growth process with plasma induced reaction of metal nanoparticles and the substrate is demonstrated for HfSiON. We applied N$_{2}$ plasma for the interfacial reaction and nitridation of Hf nanoparticles on SiO$_{2}$/Si(100) substrate to form HfSiON from metal source. The system consists of a UHV-SPM chamber with an e-beam metal evaporation source, a separate VHF (50MHz) low pressure ICP plasma source, and ex-situ XPS. Commercial Si(100) wafer with oxide surface layer is introduced to the chamber and Hf metal beam is exposed to the surface at room temperature. The morphological development of the surface is analyzed with the in-situ non-contact AFM. The N$_{2}$ ICP is exposed to the sample. AFM image shows the self-assembled Hf nanoparticles on SiO$_{2}$ surface after the Hf deposition. Dome shaped particles with 3-6 nm width are close-packed on the surface with high density of 8.5 $\times$ 10$^{12}$ cm$^{-2}$. The N$_{2}$ ICP exposure induces the interfacial reaction of the Hf nanoparticle/SiO2/Si structure and forms HfSiON(film)/SiON/Si due to the XPS analysis. [Preview Abstract] |
Friday, October 8, 2010 5:15PM - 5:30PM |
VF2.00005: Plasma synthesis of silicon nanocrystals as a new route for large area electronic applications Pere Roca i Cabarrocas, Alexey Abramov, Ka-Hyun Kim, Erik V. Johnson For over 30 years low pressure silane plasmas have been studied for the deposition of amorphous silicon thin films, which are today the basis of a fast expanding flat panel displays and more recently solar cells industries. This deposition technology holds the possibility of even larger implementations. Indeed, in order to make silicon thin film solar cells competitive, an increase in throughput along with an increase in material quality are required. To this end, in recent years we have focused on the synthesis of silicon nanocrystals in silane plasmas to be used as building blocks for thin film deposition, and have shown that in the case of polymorphous silicon films, indeed this approach allows one to increase simultaneously the deposition rate and cell efficiency. However, to increase the deposition rate even further ($>$ 1 nm/s) one would like to achieve high concentrations of silicon nanocrystals while avoiding their agglomeration. Here we will focus on the extension of these studies to nano, micro, and polycrystalline silicon thin films, as well as to epitaxial growth on crystalline substrates using nanocrystals. Moreover, doping of silicon nanocrystals and the synthesis of Ge, SiGe and SiC nanocrystals open exciting perspectives in this field. [Preview Abstract] |
Friday, October 8, 2010 5:30PM - 5:45PM |
VF2.00006: Cold atmospheric pressure plasma polymerization of hexamethyldisiloxane for improved wood plastics composites Patrick Pedrow, William Lekobou, Erik Wemlinger, Karl Englund, Marie-Pierre Laborie Polyolefin-based plastic composites have become a large class of construction material for exterior applications. One of the main disadvantages of wood/plastic composites resides in the low compatibility between the polar and hydrophilic surface of wood and the non-polar and hydrophobic polyolefin matrix, hindering the dispersion of the wood flour in the polymer matrix and resulting in lower mechanical properties for the composite. To improve interfacial compatibility wood flour can be pretreated with environmentally friendly methods such as plasma treatment. We evaluate here the efficacy of DC atmospheric pressure cold plasma polymerization of hexamethyldisiloxane (HMDSO) on wood flour to improve its compatibility with polyolefins. This presentation will describe the reactor design used to modify various surfaces using HMDSO plasma polymerization in argon. The characteristics of the plasma generated using a multipoint-to-short right circular cylinder configuration for a voltage range of 5 to 7 kV and the optimal conditions for polymerization on the substrate will also be presented. Finally we discuss the characteristics and properties of the plasma polymerized film obtained on mica, glass and wood veneers using atomic force microscopy (AFM) and infrared spectroscopy (FTIR). [Preview Abstract] |
Friday, October 8, 2010 5:45PM - 6:00PM |
VF2.00007: HMDSO / O$_{2}$ atmospheric pressure plasma chemistry leading to SiO$_{2}$ film synthesis Ruediger Reuter, Dirk Ellerweg, Jan Benedikt, Achim von Keudell In the past years, a particular type of atmospheric pressure plasma emerged: non equilibrium microplasmas that operate at low power ($<$ 50 W) and allow the treatment of or deposition on thermolabile substrates. One of the possible applications is a deposition of SiO$_{2}$ films. It has already been shown that anorganic carbon free SiO$_{2}$ films can be deposited by means of several types of these jets. The main problems are the high film porosity, which is usually controlled by energetic ion bombardment ion low pressure plasmas, and the limited knowledge of the plasma chemistry involved. The latter one is due to difficulties connected with microplasma diagnostics. More understanding and optimisation of deposition process are needed to improve the film properties. Here we report on the deposition of SiO$_{2}$ film by means of microplasma jets driven by RF voltage and operated in Ar or He as plasma forming gas. Hexamethyldisiloxane (HMDSO) and O$_{2}$ are used as precursor to generate SiO$_{2}$. The SiO$_{2}$ film composition is measured by FTIR and XPS as functions of varying plasma parameters and distance between jet effluent and film substrate and compared with the gas phase analysed by means of molecular beam mass-spectrometry. [Preview Abstract] |
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700