63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010;
Paris, France
Session Index
Session VF2: Plasma Deposition III
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Chair: Masaharu Shiratani, Kyushu University
Room: Petit Amphitheatre
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Friday, October 8, 2010
4:00PM - 4:30PM
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VF2.00001: Purified Si Film Formation from Metallurgical-Grade Si by Hydrogen Plasma Induced Chemical Transport
Invited Speaker:
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Friday, October 8, 2010
4:30PM - 4:45PM
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VF2.00002: Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition
Hajime Shirai, Daisuke Ohba, Zeguo Tang, Chien-Hui Lai
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Friday, October 8, 2010
4:45PM - 5:00PM
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VF2.00003: How much water we have in silane-oxygen plasma during SiO2 deposition in HDP-PECVD reactor
Pavel Bulkin, Tatiana Novikova, Dmitri Daineka, Roelene Botha
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Friday, October 8, 2010
5:00PM - 5:15PM
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VF2.00004: Plasma induced chemistry of self-assembled nanoparticles and underlying surface for High-k film growth
Takeshi Kitajima, Toshiki Nakano
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Friday, October 8, 2010
5:15PM - 5:30PM
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VF2.00005: Plasma synthesis of silicon nanocrystals as a new route for large area electronic applications
Pere Roca i Cabarrocas, Alexey Abramov, Ka-Hyun Kim, Erik V. Johnson
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Friday, October 8, 2010
5:30PM - 5:45PM
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VF2.00006: Cold atmospheric pressure plasma polymerization of hexamethyldisiloxane for improved wood plastics composites
Patrick Pedrow, William Lekobou, Erik Wemlinger, Karl Englund, Marie-Pierre Laborie
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Friday, October 8, 2010
5:45PM - 6:00PM
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VF2.00007: HMDSO / O$_{2}$ atmospheric pressure plasma chemistry leading to SiO$_{2}$ film synthesis
Ruediger Reuter, Dirk Ellerweg, Jan Benedikt, Achim von Keudell
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