Bulletin of the American Physical Society
66th Annual Gaseous Electronics Conference
Volume 58, Number 8
Monday–Friday, September 30–October 4 2013; Princeton, New Jersey
Session SF2: Plasma Deposition |
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Chair: Hirotaka Toyoda, Nagoya University Room: Ballroom II |
Friday, October 4, 2013 8:30AM - 9:00AM |
SF2.00001: Novel plasma catalytic reaction for structural-controlled growth of graphene and graphene nanoribbon Invited Speaker: Toshiaki Kato An advanced plasma chemical vapor deposition (CVD) method has outstanding advantages for the structural-controlled growth and functionalization of carbon nanotubes (CNTs) [1,2] and graphene [3,4]. Graphene nanoribbons combine the unique electronic and spin properties of graphene with a transport gap. This makes them an attractive candidate material for the channels of next-generation transistors. However, the reliable site and alignment control of nanoribbons with high on/off current ratios remains a challenge. We have developed a new, simple, scalable method based on novel plasma catalytic reaction for directly fabricating narrow (23 nm) graphene nanoribbon devices with a clear transport gap (58.5 meV) and a high on/off ratio (10000). Indeed, graphene nanoribbons can be grown at any desired position on an insulating substrate without any post-growth treatment, and large-scale, two- and three dimensional integration of graphene nanoribbon devices should be realizable, thereby accelerating the practical evolution of graphene nanoribbon-based electrical applications [5].\\[4pt] [1] T. Kato and R. Hatakeyama, J. Am. Chem. Soc. 130, 8101 (2008).\\[0pt] [2] T. Kato and R. Hatakeyama, ACS Nano 4, 7395 (2010).\\[0pt] [3] T. Kato, L. Jiao, X. Wang, H. Wang, X. Li, L. Zhang, R. Hatakeyama, and H. Dai, Small 7, 574 (2011). \\[0pt] [4] T. Kato and R. Hatakeyama, ACS Nano 6, 8508 (2012).\\[0pt] [5] T. Kato and R. Hatakeyama, Nature Nanotechnology 7, 651 (2012). [Preview Abstract] |
Friday, October 4, 2013 9:00AM - 9:15AM |
SF2.00002: A Source of Metal Vapor and Pulsed Beams of High-Energy Gas Molecules Alexander Metel, Vasily Bolbukov, Marina Volosova, Sergei Grigoriev, Yury Melnik Application to a substrate of negative high-voltage pulses results in 0.1-mm-thick nc-Ti$_{2}$N/nc-TiN nanocomposite tough and superhard coatings with an interface width exceeding 5 $\mu $m. For production of such coatings on complex-shaped dielectric products a source of broad pulsed beams of high-energy gas molecules has been developed the molecule trajectories coinciding with those of slow metal atoms produced due to sputtering a target by ions accelerated from the ion emitter of the source. The atoms pass through the emitter and together with gas ions enter the process chamber through the emissive grid. The emitter is produced at the gas pressure 0.2-0.5 Pa by glow discharge with confinement of electrons in an electrostatic trap formed by the grid and a cold hollow cathode. Specialty of the source is that the ion emitter potential is equal to zero, negative high-voltage pulses are applied to the grid and high-energy gas molecules are produced due to charge-exchange collisions in two space-charge sheaths: first between the emitter and the grid and then between the grid and the secondary plasma. [Preview Abstract] |
Friday, October 4, 2013 9:15AM - 9:30AM |
SF2.00003: Diagnostics and Monitoring of a Plasma Beam Source based on Optical Emission Spectroscopy Jens Harhausen, R\"udiger Foest, Detlef Loffhagen, Andreas Ohl, Jan Sch\"afer Plasma ion assisted deposition (PIAD) is employed for the production of high performance optical coatings. Here, the assist-source is a hot cathode DC discharge (Advanced Plasma Source APS) which generates an ion beam (ion energy ${E_{\rm i}\sim 50}$-${150\,\mbox{eV}}$) based on an expansion process at a chamber pressure of ${p\sim 20\,\mbox{mPa}}$. Efforts in plasma characterization have been made to improve the PIAD concept in terms of quality and reproducibility. In this contribution results on the electron energy distribution function (EEDF) and local emission of argon neutral and ion species in the plasma plume are presented. The interpretation of emission is supported by collisional radiative modeling. Main findings are the occurrence of a nonlocal EEDF and an inhomogeneous distribution of emission which is sensitive to the conditioning of the APS, like the cathode temperature. This detailed view allows a novel approach to monitor the plasma state in this particular deposition environment along with employing a control scheme for PIAD. First results obtained for oxide layers (TiO$_2$, Al$_2$O$_3$) are discussed. [Preview Abstract] |
Friday, October 4, 2013 9:30AM - 9:45AM |
SF2.00004: Plasma chemistry and scaling parameter in high-current dielectric barrier discharges used for plasma-enhanced CVD of SiO$_{2}$ on polymers R. Engeln, S. Welzel, S.A. Starostin, H. de Vries, M.C.M. van de Sanden Plasma-enhanced roll-to-roll processing of polymeric substrates in diffusive, air-like dielectric barrier discharges containing organo-silicon precursors has been shown to yield high-quality SiO$_{2}$ thin films. To scrutinise the link between the comlex precursor chemistry and the film formation complementary studies of (i) the discharge evolution, (ii) the gas phase composition, and (iii) the film properties of the silica-like films were carried out. Spatially and time-resolved optical emission provided details about the evolution of the ionisation waves in the discharge. Ex-situ Fourier-transform infrared (IR) absorption spectroscopy (AS) was implemented to study the gas phase downstream as function of injected power and hence the level of precursor consumption. Additionally, time-resolved in-situ IR laser AS was used to assess specifically the decomposition of HMDSO and TEOS. The results were corroborated by XPS and SE analysis of the layers deposited. Typically, a H-N-O chemistry in the presence of traces of hydrocarbons is observed. It transpires that the CO gas phase density is closely linked with the growth rate and the carbon content of the SiO$_{2}$ films. More importantly, the trends observed can be described by a scaling parameter. [Preview Abstract] |
Friday, October 4, 2013 9:45AM - 10:00AM |
SF2.00005: Atmospheric inductively coupled Ar/H$_{2}$ plasmas jet for low-temperature deposition of Cu Thin Film on Polyimide Peng Zhao, Wei Zheng, Yuedong Meng, Masaaki Nagatsu For fabrication of future flexible electronic devices and depositing Cu thin films on polyimide substrate at low temperature, an atmospheric inductively coupled plasma jet driven by a 13.56 MHz radio frequency (RF) power is developed. In previous studies, we found that by adding a fractional amount of H$_{2}$ gas into Ar plasma, quality of Cu film was significantly improved. But under air atmosphere, the oxidization of deposited film is inevitable. So we developed the technology in nitrogen atmosphere. We invested the plasma jet properties of Ar plasma in air, Ar/ H$_{2}$ plasma in air and Ar/ H$_{2}$ plasma in nitrogen atmosphere, to discuss the effect of adding H$_{2}$ to Ar plasma and nitrogen background on plasma properties. The plasma gas temperature diagnoses and chemical reaction research during deposition were performed by OES. The plasma jet non-equilibrium numeral simulations were also carried out for thermal and transport properties during deposition. The effects on Cu films quality were studied by means of XPS and SEM. All the plasma properties and the results of Cu film would give us an insight on the mechanism and the possibility of improving the process. [Preview Abstract] |
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