Bulletin of the American Physical Society
61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008; Dallas, Texas
Session RR1: Material Processing I |
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Chair: P. Kothnur, Novellus Systems, Inc Room: Salon E |
Thursday, October 16, 2008 1:30PM - 1:45PM |
RR1.00001: Plasma Characterization of MPCVD Discharges for Nanocrystalline Diamond Deposition Leigh Winfrey, Steven Shannon, Richard Chromik, Kathryn Wahl, Robert Nemanich, Mohamed Bourham Carbon forms into many different allotropes that can be useful in deposition of thin films. These forms or phases vary in properties and performance, and the variations are largely due to bonding structure and chemical properties. These properties result from plasma chemistry and environment. This work correlates the plasma deposition environment with surface properties and friction performance of nanocrystalline diamond coatings in a microwave plasma discharge. The plasma characterization was carried out using optical emission spectroscopy of the discharge at various gas mixing ratios in both UV-VIS and VIS-NIR. Examination of the plasma parameters has shown radical and ion formation, which satisfies conditions needed for diamond deposition. Plasma number density and electron temperature vary with plasma composition, they range from 2-4 x 10$^{14}$ cm$^{-3}$ and 1-5 eV respectively. [Preview Abstract] |
Thursday, October 16, 2008 1:45PM - 2:00PM |
RR1.00002: Nano-particle manipulation using pulse RF discharges with amplitude modulation Shinya Iwashita, Hiroshi Miyata, Hidefumi Matsuzaki, Kazunori Koga, Masaharu Shiratani We have proposed a novel nano-system construction method, which consists of production of nano-blocks and radicals (adhesives) in reactive plasmas, their transport towards a substrate, arrangement of nano-blocks on the substrate [1-3]. For the method, size of nano-blocks is controlled by the duration of pulse RF discharges [1] and their rapid transport towards a substrate is realized using pulse RF discharges with amplitude modulation (AM) of the discharge voltage [2, 3]. During the period of AM nano-blocks can be transported from their generation region near the powered electrode to a substrate at a velocity more than 67 cm/s, which is at least 6 times that after turning off the unmodulated discharges. Such rapid transport needs an asymmetric potential profile, in other words, a large voltage drop across the sheath near the powered electrode. We will report the experimental results and discuss the mechanism of the rapid transport in this presentation. [1] S. Nunomura, et al. J. Appl. Phys., 99, 083302 (2006). [2] K. Koga, et al. J. Phys. D, 40, 2267 (2007). [3] M. Shiratani, et al. Faraday Discuss., 138, 127 (2008). [Preview Abstract] |
Thursday, October 16, 2008 2:00PM - 2:15PM |
RR1.00003: GEC Student Award for Excellence Finalist: Plasma controlled adatom delivery and (re)distribution: enabling uninterrupted low temperature growth of ultra long vertically aligned carbon nanotubes Eugene Tam, Kostya Ostrikov Vertically Aligned Single Wall Carbon Nanotubes (VASWCNTs) are of intense research interest, particularly in nanoelectronics. A major obstacle for VASWCNTs is the limited lengths in which they can be grown. The growth of surface bound VASWCNTs seems to halts after their maximum length is reached, a phenomena that is commonly attributed to catalyst poisoning. In addition, VASWCNTs generally require very high temperatures and thus the growth of the VASWCNTs is usually performed by separate intermediate steps before attachment to any device. Some experiments have shown that it is possible to grow VASWCNTs at sub 500\r{ }C and all have been done in plasma environments. We present the results that uses a Monte-Carlo technique to elucidate how plasmas affect the growth of VASWCNTs by controlling the precursor trajectories, substrate heating and changing surface activation and desorption energies. Here we show the precursor distribution along the surface is the primary cause for the VASWCNT growth to slow down and under the same gaseous and substrate conditions, VASWCNTs have a growth rate up to an order of magnitude higher than their neutral counter parts in plasma environments and allow for the growth of longer VASWCNTs. [Preview Abstract] |
Thursday, October 16, 2008 2:15PM - 2:30PM |
RR1.00004: Thermal treatment influence on magnetoresistive properties of the MgF$_2$ - Co and and MgF$_2$ - Permalloy films prepared by thermoelectron sustained vacuum discharge C.P. Lungu, I. Mustata, A. Anghel, A.M. Lungu, O. Pompilian, C. Porosnicu, C. Ticos, V. Kuncser, G. Schinteie, D. Predoi A thermoelectron sustained vacuum discharge (TSVD) method was found to be suitable for preparation of films with different relative content of Co in the MgF$_2$ insulating matrix. Co-MgF$_2$ and Permalloy-MgF$_2$ granular films presenting TMR effects were prepared by the simultaneous ignition of plasmas in Co and MgF$_2$ vapors, respectively. The relative concentrations of the two materials used for deposition depend on the distance between the substrate and the anodes. Morphological, structural and magnetic behaviors were analyzed in as prepared and annealed samples. The influence of the Co content on the magnetic and optical properties of the prepared films was analyzed, in correlation with tunneling magneto-resistance and Kerr effects, respectively. The tunneling magneto-resistance and Kerr effect were found maximal for 20-30\% Co content. [Preview Abstract] |
Thursday, October 16, 2008 2:30PM - 2:45PM |
RR1.00005: High Aspect Ratio HBr Based Dry Etching of GaInAsP/InP for Nanoscale Photonic Couplers Nahid Sultana, Wei Zhou, Duncan MacFarlane Large scale integrated photonics demand nanoscale features that extend deeply into the III-V substrate to cover a propagating mode. The researchers discuss HBr etching of frustrated total internal reflection (FTIR) couplers with feature sizes of approximately 140nm wide by 20 $\mu$m long by 3 $\mu$m deep in InP. A variety of HBr based chemistries will be benchmarked against more traditional Chlorine based processes. Both FIB and EBL patterned features will be presented with aspect ratios greater than 30:1. Importantly, with HBr, the hetereostructures can be etched through with reasonable smoothness at 165 degrees Celsius, and these are beneficial for reliable InP devices. [Preview Abstract] |
Thursday, October 16, 2008 2:45PM - 3:00PM |
RR1.00006: Control of deposition profile of plasma CVD hard carbon films on substrates with trenches Masaharu Shiratani, Jun Umetsu, Kazuhiko Inoue, Takuya Nomura, Hidefumi Matsuzaki, Kazunori Koga, Yuichi Setsuhara, Makoto Sekine, Masaru Hori We have realized sub-conformal, conformal and anisotropic deposition profiles of Cu in trenches by plasma CVD [1]. Here we report control of deposition profile of carbon films by plasma CVD. Experiments were performed using a H-assisted plasma CVD reactor in which a 28 MHz capacitively-coupled main discharge and a 13.56 MHz inductive-coupled discharge for an H atom source were sustained. Toluene diluted with H2 was supplied at a flow rate of 90 sccm. The total pressure of reactor was 13 Pa. To study dependence of deposition rate on a ratio of ion flux to radical flux, substrates were covered with a piece of mesh of 10-50 mesh/inch at 1-5 mm above the substrates. \textit{Without a mesh} the deposition rates at the top, bottom, and sidewall of a trench of the aspect ratio of 1.2 are 20.4, 16.3, and 3.57 nm/min, whereas the corresponding values are 11.7, 9.17, and 3.31 nm/min \textit{with }a piece of mesh of 14 mesh/inch and 60.8{\%} transparency, set 1 mm above the substrate. The deposition profile can be controlled by the ratio of ion flux to radical flux. [1] K. Takenaka, et al. Pure Appl. Chem. \textbf{77}, 391 (2005). [Preview Abstract] |
Thursday, October 16, 2008 3:00PM - 3:15PM |
RR1.00007: Plasma assisted deposition of metal fluorides for 193nm applications Martin Bischoff, Maik Sode, Dieter Gaebler, Norbert Kaiser, Andreas Tuennermann The ArF lithography technology requires a minimization of optical losses due to scattering and absorption. Consequently it is necessary to optimize the coating process of metal fluorides. The properties of metal fluoride thin films are mainly affected by the deposition methods, their parameters, and the vacuum conditions. Until now the best results were achieved by metal boat evaporation with high substrate temperature and without plasma assistance. In fact, it was demonstrated that the plasma assisted deposition process results in optical thin films with high packing density but the losses due to absorption were extremely high for deep and vacuum ultraviolet applications. This paper will demonstrate that most of the common metal fluorides can be deposited by electron beam evaporation with plasma assistance. In comparison to other deposition methods, the prepared thin films show low absorption in the VUV spectral range, high packing density, and less water content. The densification of the thin films was performed by a Leybold LION plasma source. As working gas, a variable mixture of fluorine and argon gas was chosen. To understand the deposition process and the interaction of the plasma with the deposition material, various characterization methods like plasma emission spectroscopy and ion current measurements were implemented. [Preview Abstract] |
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