Bulletin of the American Physical Society
2018 Annual Fall Meeting of the APS Ohio-Region Section
Volume 63, Number 15
Friday–Saturday, September 28–29, 2018; University of Toledo, Toledo, Ohio
Session E04: Atomic, Molecular, Optical, and Quantum Physics |
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Chair: Rabee Alkhayat, The University of Toledo Room: SU 2592 |
Saturday, September 29, 2018 9:00AM - 9:15AM |
E04.00001: Towards solving two-dimensional adjoint QCD with a basis-function approach Uwe Trittmann In a recent paper, I presented a method to construct a complete basis of asymptotic eigenfunctions for two-dimensional adjoint QCD. I'll review the method to discuss how it can be used to extract the single-particle content of the theory. The idea is to approximate the eigensolutions of the full theory as linear combinations of the asymptotic basis functions. |
Saturday, September 29, 2018 9:15AM - 9:30AM |
E04.00002: Full rotational and vibrational energy levels of argon dimer by the solution of Lippmann-Schwinger integral equation in momentum Mohammadreza Hadizadeh, Taghi Sahraeian The Schrödinger equation is often solved in an effort to benchmark and design interatomic potentials. This work describes the numerical solution of the Schrödinger equation in its Lippmann-Schwinger form in momentum space by means of a direct technique to calculate argon dimer binding energies. Two models of argon-argon interaction developed by Patkowski et al. are employed. Our numerical analysis confirms not only the eight argon dimer vibrational levels of the ground state of argon dimer (i.e. for j=0) predicted by other groups but also provides a very precise means for determining the binding energy of the ninth state which its value is a matter of discussion. Our calculations have been also extended to states with higher rotational quantum numbers and we have calculated the energy of all 174 bound states for both potential models. |
Saturday, September 29, 2018 9:30AM - 9:45AM |
E04.00003: Chirality and the photon transport in disordered waveguide quantum electrodynamics Imran M Mirza Few-level emitters coupled to optical waveguides (waveguide QED) has emerged as a fascinating platform to observe several quantum optical effects in a single setup [1]. In the many-emitter waveguide QED, almost all of the studies to date have considered a periodic arrangement of atoms. In our recent work [2], by relaxing this condition we have studied the transport of single photons in the presence of disorder (either in the position of emitters or in their transition frequencies). A key focus of this work is to analyze how preferential emission directions in the waveguide (chirality) [3] impacts the formation of photon localized and extended states in the presence of disorder. [1] D. Roy et. al, Rev. Mod. Phys. 89, 021001 (2017) [2] Imran M. Mirza, John C. Schotland, JOSA B, 35 (5), 1149-1158 (2018) [3] P. Lodhal et al., Nature, 541, 473-480 (2017) |
Saturday, September 29, 2018 9:45AM - 10:00AM |
E04.00004: Ultrafast energy transfer between Graphene Oxide quantum dots and plasmons in strong coupling region MEG MAHAT, Apil Mahat, Arup Neogi The optical nonlinearity of graphene oxide quantum dots (GOQDs) in the presence of plasmons is modified by resonant excitation of ultrashort laser pulses. The experimentally observed ultrafast Rabi oscillations in GOQDs/MNPs indicates coherent energy transfer between excitonic quantum emitters and plasmonic field in strong coupling regime. Our experimental measurements are consistent with the theoretical observations in quantum emitter-plasmon hybrid system1. 1.Maxim Sukharev, Tamar Seideman , Robert J. Gordon, Adi Salomon, and Yehiam Prior Ultrafast Energy Transfer Between Molecular Assemblies and Surface Plasmons in the Strong Coupling Regim ACS Nano 8, 1, 807-817
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Saturday, September 29, 2018 10:00AM - 10:15AM |
E04.00005: Application of Optical Hall Effect to PV Relevant Materials Prakash Uprety, Changlei Wang, Prakash Koirala, Dhurba Sapkota, Kiran Ghimire, Maxwell Junda, Robert Collins Transport properties [carrier concentration (N), mobility (μ), effective mass (m*)] of PV device materials are deduced from free carrier optical absorption using non-contacting optical Hall effect measurements. This technique has the capability to determine the transport properties of each component layer in complex multilayer PV device structures, which may be inaccessible by direct electrical measurements like electrical Hall effect and 4-point probe as those technique require direct physical contact. Case studies include CH3NH3PbI3, CdTe, and CuInSe2 thin films as well as commercial Si wafers. This technique shows the sensitivity to three parameters N, μ and m* for Si wafers; and two N and μ for CH3NH3PbI3, CdTe, and CuInSe2 thin films while THz ellipsometry alone shows the sensitivity to N and μ for the wafers; and either N or μ for the thin films when other value is fixed from literature. Here in each case, an additional transport parameter measurement is gained from the magnetic field dependent THz ellipsometry measurements. |
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