Application of Optical Hall Effect to PV Relevant Materials*

Transport properties [carrier concentration (N), mobility (μ), effective mass (m*)] of PV device materials are deduced from free carrier optical absorption using non-contacting optical Hall effect measurements. This technique has the capability to determine the transport properties of each component layer in complex multilayer PV device structures, which may be inaccessible by direct electrical measurements like electrical Hall effect and 4-point probe as those technique require direct physical contact. Case studies include CH₃NH₃PbI₃, CdTe, and CuInSe₂ thin films as well as commercial Si wafers. This technique shows the sensitivity to three parameters N, μ and m* for Si wafers; and two N and μ  for CH₃NH₃PbI₃, CdTe, and CuInSe₂ thin films while THz ellipsometry alone shows the sensitivity to N and μ for the wafers; and either N or μ for the thin films when other value is fixed from literature. Here in each case, an additional transport parameter measurement is gained from the magnetic field dependent THz ellipsometry measurements.