Hall and Magnetoresistance effects in bilayer heterostructures of Weyl semimetal and semiconducting ferromagnet*

Bilayer systems consisting of semiconducting ferromagnets (FMs), and Weyl semimetals (WSMs) provide a rich platform to study spin-orbit torque phenomena and interactions between magnetism and topological states. The WSMs offers unconventional charge-to-spin conversion capabilities, which can be harnessed for the development of bi-stable memory and logic devices. On the other hand, two-dimensional (2D) semiconducting FMs, such as Cr₂Ge₂Te₆ (CGT), have the potential to enhance the functionalities in SOT devices through electric field tunable magnetism. Previously, electrical readout of magnetization of a 2D semiconducting FM, i.e., CGT, has been demonstrated by coupling it with heavy metal and topological insulator. However, electrical detection of magnetization in the heterostructures comprising of WSMs and 2D-FMs is missing, which is essential to realize SOT devices based on these systems. In this direction, we will present our initial results that demonstrate observation of proximity induced anomalous Hall effect and spin magnetoresistance in WSM/CGT bilayer systems.