Bulletin of the American Physical Society
2024 APS March Meeting
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session K23: Spin-Dependent Phenomena in Semiconductors: van der Waals Electrical Control
3:00 PM–5:48 PM,
Tuesday, March 5, 2024
Room: 101C
Sponsoring
Unit:
GMAG
Chair: Paulo Faria Junior, University of Regensburg; Steven Bennett, United States Naval Research Laboratory
Abstract: K23.00001 : Current controlled spin states of van-der-Waals topological Fe3GeTe2
3:00 PM–3:36 PM
Presenter:
Kai-Xuan Zhang
(Soul National University)
Authors:
Kai-Xuan Zhang
(Soul National University)
Je-Geun Park
(Seoul National University (SNU))
More detailed information is described below: we discover that an in-plane current can tune the hard spin state to a soft one in the nanoscale FGT devices, through a substantial reduction of coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for single FGT itself without any heavy-metal layer. Such spin-orbit torque is directly related to the large Berry curvature and so its band topology. Furthermore, making use of this principle, we demonstrate a working model of new spin device, where highly efficient nonvolatile switching and multi-level states by the tiny current are achieved. Taking one more step forward, we develop this spin model to an all-vdW classic three-terminal SOT device of FGT/hBN/FGT heterostructure, whose spin configurations can be written by spin-orbit torque and read by tunneling spin-resistance separately. In addition, plateau-like spin-resistance is unexpectedly observed in twisted FGT/FGT homojunction without any spacer. On the other hand, inversion symmetry breaking is a general requirement for spin-orbit torque, which has been recently unveiled by our second harmonic generation in this previously-thought centrosymmetric material, finally settling the remaining puzzle.
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