Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session S74: Semiconducting Qubits II
8:00 AM–11:00 AM,
Thursday, March 9, 2023
Room: Room 403/404
Sponsoring
Unit:
DQI
Chair: Ferdinand Kuemmeth, Niels Bohr Institute, University of Copenhagen
Abstract: S74.00009 : A scalable spin-shuttling architecture for Si/SiGe-based quantum computing
10:00 AM–10:12 AM
Presenter:
Alexander Willmes
(RWTH Aachen University)
Authors:
Alexander Willmes
(RWTH Aachen University)
Matthias Künne
(RWTH Aachen University)
Harsh Bhardwaj
(RWTH Aachen University)
Max Oberländer
(RWTH Aachen University)
Julian Teske
(RWTH Aachen University)
Ran Xue
(RWTH Aachen University)
Inga Seidler
(RWTH Aachen University)
Eugen Kammerloher
(RWTH Aachen University)
Lars Schreiber
(RWTH Aachen University)
Hendrik Bluhm
(RWTH Aachen University)
I present an architecture proposal based on shuttling electrons over micron-scale distances [1,2] allowing for beyond next-neighbor coupling, low crosstalk, small operational frequencies and reduced magnetic field gradients, which leads to better coherence.
For this purpose I show detailed device simulations for the Si/SiGe platform of all relevant operations and components using realistic device parameters, provide estimates for operation fidelities and validate the producibility by providing realistic layouts compatible with state-of-the-art industrial fabrication technologies.
Assuming that electrons can be shuttled over several microns with high spin coherence, our architecture bridges the gap between conceptual propsals and device fabrication while optimizing operational performance, thus paving the way for a scalable Si/SiGe-based quantum processor.
[1] Seidler et al. Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture. npj Quantum Inf. 8, 100 (2022)
[2] Langrock, V. et al. Blueprint of a scalable spin qubit shuttling device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO2. Preprint at https://arxiv.org/abs/2202.11793 (2022)
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