Impact of phonons on Si/SiGe spin qubits

We theoretically investigate how phonons impact the fidelities of semiconductor spin qubit gate operations as a function of several parameters, including temperature, confinement length, and interdot distance. We consider both Loss-DiVincenzo and singlet-triplet Si/SiGe spin qubits and use a master equation based approach to investigate phonon-induced errors, including leakage outside the computational subspace. Phonons generated by spin qubit readout devices also impact the fidelities of semiconductor spin qubit gate operations. Here, we theoretically explore how phonons emitted from a single electron transistor impact Loss-DiVincenzo and singlet-triplet Si/SiGe spin qubit gate operations using several analytical approaches, including Keldysh field theory.